Magnetoresistive Component Multi-Axis Sensing via Nonparallel Layer
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Solution Overview
Problem
Current magnetoresistive sensing devices require improvements in cost, size, package complexity, and performance to effectively sense changes in X-axis, Y-axis, and Z-axis magnetic fields.
Innovation Solution
A magnetoresistive component comprising a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer, where the nonparallel layer is disposed on the sidewall of a trench and extends from the horizontal layer, enhancing magnetic field sensing capabilities by redirecting and guiding magnetic flux.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional magnetoresistive layers are used, then device structure is simple, but sensing performance for multiple axes is insufficient
Solution Approach 1:
The patent introduces a nonparallel magnetoresistive layer that extends vertically from the horizontal layer, adding a third dimension (vertical height) to the sensing structure. This dimensional change enables the device to sense magnetic fields in the Z-axis while maintaining X and Y axis sensing capabilities through the horizontal layer, thereby improving multi-axis sensing performance without requiring multiple separate sensor structures.
Solution Approach 2:
The nonparallel magnetoresistive layer is nested within a trench structure, with the layer forming the sidewalls of the trench. This nesting approach allows the vertical sensing capability to be integrated within the existing horizontal layer structure, achieving multi-axis sensing while minimizing additional space occupation and reducing overall device complexity.
2Productivity
If conventional magnetoresistive structures are used, then manufacturing process is simple, but package size and complexity are large
Solution Approach 1:
The patent merges the horizontal and vertical sensing layers into a single integrated structure where the nonparallel layer forms the trench sidewalls. This combining of functions into one structure reduces the overall package size and eliminates the need for separate horizontal and vertical sensor elements, thereby reducing device footprint while maintaining manufacturing feasibility through standard trench formation processes.
3Measurement precision
If conventional magnetoresistive layers are used, then structure is simple, but magnetic field guidance capability is insufficient
Solution Approach 1:
The nonparallel magnetoresistive layer acts as an intermediary structure that guides and redirects magnetic flux from the horizontal layer to enhance sensing sensitivity. By positioning the layer at an angle within the trench, it serves as a magnetic flux mediator that improves the coupling between the horizontal sensing layer and the external magnetic field, thereby enhancing measurement precision without requiring complex additional components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides improved performance and reduced package complexity and size for magnetoresistive devices, enabling effective sensing of magnetic fields in multiple axes with enhanced sensitivity and efficiency.
Implementation Method 1
The magnetoresistive materials used in a magnetoresistive sensing component would change its resistance according to a change of an external magnetic field
Implementation Method 2
enhancing magnetic field sensing capabilities by redirecting and guiding magnetic flux
Data Source
AI summary
A magnetoresistive component comprises a horizontal magnetoresistive layer and a nonparallel magnetoresistive layer. The horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side, along its extending direction. The nonparallel magnetoresistive layer is not parallel to the surface of the substrate and is physically connected to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.