Magnetoresistive Element Fe2TiSi Insertion Layer Lattice Distortion
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Solution Overview
Problem
Magnetoresistive effect elements using Heusler alloys and nonmagnetic metals exhibit insufficient magnetoresistive effects, particularly at room temperature due to high temperature dependence.
Innovation Solution
Incorporating Fe2TiSi insertion layers with specific thicknesses in the magnetoresistive effect elements to alleviate lattice distortion and stabilize electronic bands, thereby enhancing the magnetoresistance ratio at room temperature. This includes configurations with Fe2TiSi layers under and over the nonmagnetic spacer layer, as well as on the surfaces of the ferromagnetic layers, and using Heusler alloys and specific nonmagnetic spacer materials like MgO and metal oxides.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Heusler alloy and nonmagnetic metal are merely combined, then the magnetoresistive effect element can be manufactured, but the magnetoresistive effect is insufficient and temperature dependence is high
Solution Approach 1:
An insertion layer made of Fe2TiSi is introduced between the Heusler alloy layer and the nonmagnetic metal layer. This intermediary layer acts as a buffer to reduce lattice distortion at the interface, thereby improving the magnetoresistive effect and reducing temperature dependence while maintaining the basic structure of the magnetoresistive effect element
Solution Approach 2:
The patent uses a composite structure combining Fe2TiSi insertion layer, Heusler alloy layer, and nonmagnetic metal layer. This composite material approach allows each layer to contribute its specific properties: Fe2TiSi for lattice matching, Heusler alloy for high magnetoresistive effect, and nonmagnetic metal for spacer function, achieving superior overall performance
2Reliability
If the insertion layer is made thinner to increase magnetoresistance ratio, then the magnetoresistance ratio increases, but the effect of the insertion layer is reduced
Solution Approach 1:
The patent optimizes the thickness parameter of the Fe2TiSi insertion layer to a specific range (0.1 nm to 3 nm). This parameter optimization balances two competing requirements: keeping the insertion layer thin enough to maintain high magnetoresistance ratio while ensuring it is thick enough to provide sufficient lattice matching and distortion reduction effect
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation significantly improves the magnetoresistance ratio at room temperature by reducing temperature dependence and stabilizing electronic bands, leading to enhanced performance in magnetic heads, sensors, and high-frequency filters.
Implementation Method 1
Fe2TiSi causes a difference of a lattice constant of the nonmagnetic spacer layer from all the first ferromagnetic layer and the second ferromagnetic layer to be sufficiently small. Thus, distortion at an interface is alleviated.
Implementation Method 2
A giant magnetoresistive (GMR) effect element in the related art includes a first ferromagnetic layer as a fixed magnetization layer, a second ferromagnetic layer as a free magnetization layer, and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. In the GMR effect element, spinning electrons are capable of flowing in the upper and lower ferromagnetic layers with passing through the ferromagnetic layers, in a state where directions of magnetization of the ferromagnetic layers are aligned.
Implementation Method 3
A current-perpendicular-to-plane GMR (CPP-GMR) effect element has a magnetoresistive effect smaller than that of a tunnel magnetoresistive (TMR) effect element.
Data Source
AI summary
There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.