Magnetoresistive Element Insulating Layer Prevents Short-Circuit

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Magnetoresistive effect elements, such as hard disk drives and magnetic random access memories, face the challenge of short-circuit formation due to redeposit adherence on side surfaces during processing, which can lead to damage when attempting to cut the short-circuit path.

Innovation Solution

A magnetoresistive effect element design featuring a first magnetic layer, a nonmagnetic layer, a second magnetic layer, a first insulating layer on the side surface of the second magnetic layer, a second insulating layer covering part of the first insulating layer, and a conductive layer between the insulating layers, with the conductive layer's height ensuring it does not contact the upper electrode, preventing short-circuit formation without damaging the element.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a magnetoresistive effect element is processed, then the element structure is formed, but redeposit adheres to side surfaces forming short-circuit paths

Engineering Contradiction:
Improveelement structure formationVSAvoidshort-circuit formation
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

An insulating layer is introduced as an intermediary between the redeposit and the electrode. This insulating layer prevents direct contact between the conductive redeposit and electrode, thereby eliminating the short-circuit path while allowing the element structure to be formed as intended

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The harmful conductive property of the redeposit is extracted or neutralized by covering it with an insulating layer. This removes the short-circuiting effect while preserving the structural integrity of the formed element

Inventive Principle:
Principle #2Taking out (Extraction)

2Object-affected harmful factors

If the short-circuit path is cut, then the short-circuit is removed, but the element is damaged

Engineering Contradiction:
Improveshort-circuit removalVSAvoidelement integrity
Core Design Contradiction:
Object-affected harmful factorsVSStrength

Solution Approach 1:

Instead of cutting the short-circuit path after formation, an insulating layer is applied in advance to prevent the short-circuit from occurring. This preliminary protective action eliminates the need for subsequent cutting operations that would damage the element

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The insulating layer serves as a mediator that prevents the harmful interaction between redeposit and electrode, allowing the short-circuit issue to be resolved without mechanical intervention that would compromise element strength

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If the conductive layer height is increased, then connectivity is improved, but contact with upper electrode causes short-circuit

Engineering Contradiction:
Improveconductive layer connectivityVSAvoidshort-circuit with upper electrode
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The second insulating layer acts as an intermediary barrier between the conductive layer and the upper electrode. This allows the conductive layer to maintain its connectivity function at increased heights without creating short-circuits, as the insulating layer prevents direct contact

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively prevents short-circuit formation and ensures the integrity of the magnetoresistive effect element by maintaining the conductive layer's position between the insulating layers, thus avoiding damage during processing.

Implementation Method 1

Magnetoresistive effect elements using magnetism such as hard disk drives (HDD) and magnetic random access memories (MRAM) have been developed

Methodology Applied
Scientific EffectMagnetoresistive effect: Magnetoresistance

Data Source

PatentUS10340311B2Magnetoresistive effect element with magnetic layers and magnetic memory
Publication Date: 2019.07.02 KIOXIA CORP
  • US10340311B2 patent drawing
  • US10340311B2 patent drawing
  • US10340311B2 patent drawing

AI summary

According to one embodiment, a magnetoresistive effect element includes: a first magnetic layer; a nonmagnetic layer provided on the first magnetic layer; a second magnetic layer provided on the nonmagnetic layer; a first insulating layer provided at least on a side surface of the second magnetic layer; a second insulating layer covering at least a part of the first insulating layer; a conductive layer provided between the first insulating layer and the second insulating layer; and a first electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer. A height of a lower surface of the second portion is equal to or less than a height of an upper surface of the conductive layer.