Magnetoresistive Element with Oxide Buffer Layer

Solution Overview

Problem

Current magnetoresistive elements face challenges in achieving high magnetoresistive change rates and low areal resistance due to defects and variations in the spacer layer, which affect the stability and performance of magnetic recording/reproducing apparatuses.

Innovation Solution

The magnetoresistive element incorporates a spacer layer, an oxide layer, and a metal layer with specific compositions and configurations, including Zn, In, Sn, Cd, Fe, Co, and Ni elements, to enhance spin-dependent scattering and filter effects, while the metal layer prevents oxidation and maintains the integrity of the oxide layer, thereby improving the magnetoresistive change rate and reducing areal resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a conventional spacer layer is used between magnetic layers, then the magnetoresistive element can be manufactured, but defects and variations in the spacer layer cause poor magnetoresistive change rates and high areal resistance

Engineering Contradiction:

Core Design Contradiction:

Manufacturing precisionVSReliability

Solution Approach 1:

An oxide layer is introduced as an intermediary between the spacer layer and the magnetic layers. This oxide layer serves as a buffer that compensates for defects and variations in the spacer layer, thereby improving the magnetoresistive change rate and stabilizing the performance of magnetic recording apparatuses without requiring changes to the spacer layer itself

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention uses a composite structure combining the spacer layer, oxide layer, and magnetic layers. The oxide layer acts as a protective and functional intermediate layer that enhances the overall performance of the magnetoresistive element by mitigating the effects of spacer layer imperfections

Inventive Principle:

Principle #40Composite materials

2Manufacturing precision

If the oxide layer is exposed to the environment, then the magnetoresistive effect can be enhanced, but the oxide layer oxidizes and deteriorates

Engineering Contradiction:

Core Design Contradiction:

Manufacturing precisionVSStability of the object's composition

Solution Approach 1:

A metal layer is introduced as an intermediary protective layer between the oxide layer and the external environment. This metal layer prevents oxidation of the oxide layer while allowing the oxide layer to maintain its function in enhancing the magnetoresistive effect, thus solving the contradiction between performance enhancement and stability

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The metal layer is placed beforehand to cushion or prevent the harmful effect of oxidation on the oxide layer. This protective measure is implemented in advance to prevent deterioration of the oxide layer's integrity while preserving its magnetoresistive enhancement capability

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration results in higher magnetoresistive change rates and lower areal resistance, stabilizing the magnetic recording/reproducing apparatus performance and enabling efficient magnetic domain control in memory cells.

Implementation Method 1

enhance spin-dependent scattering and filter effects

Methodology Applied

Scientific EffectSpin-dependent scattering: Magnetoresistance

Implementation Method 2

the metal layer prevents oxidation and maintains the integrity of the oxide layer

Methodology Applied

Scientific EffectOxidation prevention: Oxidation

Data Source

PatentUS8213130B1Magnetoresistive element, magnetic head assembly, magnetic recording/reproducing apparatus, memory cell array, and manufacturing method of magnetoresistive element

Publication Date: 2012.07.03

AI summary

A magnetoresistive element includes a first electrode, a second electrode, a first magnetic layer, a second magnetic layer, a spacer layer, an oxide layer, and a metal layer. The oxide layer is provided between the first electrode and the first magnetic layer, or within the first magnetic layer, or between the first magnetic layer and the spacer layer, or within the spacer layer, or between the spacer layer and the second magnetic layer, or within the second magnetic layer, or between the second magnetic layer and the second electrode. The oxide layer includes at least one element of Zn, In, Sn, and Cd, and at least one element of Fe, Co, and Ni. The metal layer includes at least one element of Zn, In, Sn, and Cd by not less than 5 at % and not more than 80 at %, and at least one element of Fe, Co, and Ni.