Magnetoresistive Memory Segmentation for Retention and Rewritability

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Solution Overview

Problem

Magnetoresistive memory in semiconductor storage devices faces challenges in balancing data rewritable times and retention period, leading to shortened retention for infrequently rewritten data and increased start-up time and power consumption.

Innovation Solution

A semiconductor storage device is configured with two types of magnetoresistive memories, one with a larger coercive force for long retention and the other with a smaller coercive force for increased rewritable times, both integrated on a single semiconductor chip, allowing for distinct memory areas for setting and work data.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Duration of action of stationary object

If the coercive force of magnetoresistive memory is increased to secure long data retention period, then the retention period is improved, but the number of data rewritable times is reduced

Engineering Contradiction:

Improvedata retention periodVSAvoidnumber of data rewritable times

Core Design Contradiction:

Duration of action of stationary objectVSDuration of action of moving object

Solution Approach 1:

The patent divides the magnetoresistive memory into two distinct types: first magnetoresistive memory with large coercive force for long retention period, and second magnetoresistive memory with small coercive force for high rewritable times. This segmentation allows each memory type to optimize for its specific function, resolving the contradiction between retention period and rewritable times.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the memory system are assigned different coercive force characteristics. The first magnetoresistive memory region uses large coercive force materials/structures for setting data storage, while the second magnetoresistive memory region uses small coercive force materials/structures for work data storage. This local differentiation optimizes each region for its specific data access pattern.

Inventive Principle:

Principle #3Local quality

2Duration of action of moving object

If magnetoresistive memory is configured for large number of data rewritable times, then the number of rewritable times is improved, but the data retention period is shortened

Engineering Contradiction:

Improvenumber of data rewritable timesVSAvoiddata retention period

Core Design Contradiction:

Duration of action of moving objectVSDuration of action of stationary object

Solution Approach 1:

The memory system is segmented into two functional areas: one optimized for frequent rewriting (second magnetoresistive memory with small coercive force) and another optimized for long-term retention (first magnetoresistive memory with large coercive force). This resolves the contradiction by providing specialized storage for each data type.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent applies different material compositions or structural configurations to different memory regions. The second magnetoresistive memory uses materials/structures with small coercive force for high rewrite endurance, while the first uses materials/structures with large coercive force for long retention, matching each region's quality to its functional requirements.

Inventive Principle:

Principle #3Local quality

3Duration of action of moving object

If setting data is stored in magnetoresistive memory with high rewritable times, then the number of rewritable times is improved, but the start-up time increases due to loading from external storage

Engineering Contradiction:

Improvenumber of rewritable timesVSAvoidstart-up time

Core Design Contradiction:

Duration of action of moving objectVSLoss of time

Solution Approach 1:

The patent segments the storage function by creating a dedicated first magnetoresistive memory area for setting data with long retention period. This allows setting data to be stored locally in high-retention memory rather than being loaded from external storage, eliminating start-up time delays while maintaining the integrity of setting data.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Setting data is pre-stored in the first magnetoresistive memory with large coercive force during manufacturing or initial setup. This preliminary action ensures that setting data is already available in the device's internal memory with long retention, eliminating the need for time-consuming external loading during start-up operations.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively secures both data rewritable times and retention period, reducing start-up time and power consumption by optimizing data storage and access within the semiconductor storage device.

Implementation Method 1

The first magnetoresistive memory has a larger coercive force than the second magnetoresistive memory

Methodology Applied

Scientific EffectCoercive force: Magnetic Hysteresis

Data Source

PatentUS12062388B2Semiconductor storage device having magnetoresistive memories with a different coercive force

Publication Date: 2024.08.13 AISIN CORP

AI summary

A semiconductor storage device including a first magnetoresistive memory and a second magnetoresistive memory that are two types of magnetoresistive memories accessed by a target logic unit that is one logic unit. The target logic unit Ω the first magnetoresistive memory, and the second magnetoresistive memory are formed on one semiconductor chip, and the first magnetoresistive memory has a larger coercive force than the second magnetoresistive memory.