Magnetoresistive Sensor Mn Migration Prevention

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Solution Overview

Problem

Mn-containing Heusler alloys in magnetoresistive sensors face corrosion and Mn diffusion issues, which hinder their commercial use despite offering performance improvements, as the Mn in these alloys migrates into adjacent layers, degrading sensor performance.

Innovation Solution

The use of laminated structures with Co2MnX and CoFe layers, where Co2MnX is sandwiched between CoFe layers, reduces Mn exposure at the air bearing surface and prevents Mn migration, thereby minimizing corrosion and enhancing magnetoresistive performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If Mn-containing Heusler alloys are used in magnetoresistive sensors, then magnetoresistive performance is improved, but corrosion and Mn diffusion occur which degrade sensor reliability

Engineering Contradiction:
Improvesensor performanceVSAvoidcorrosion and Mn diffusion
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A non-magnetic spacer layer is introduced between the Mn-containing Heusler alloy layers and adjacent magnetic layers. This intermediary layer prevents direct contact and interaction between Mn atoms and adjacent layers, thereby blocking Mn diffusion while maintaining the magnetoresistive performance benefits of the Heusler alloy structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The sensor employs a composite layered structure combining Mn-containing Heusler alloy layers (Co2MnX where X=Si, Ge, or Al) with non-magnetic spacer materials. This composite approach allows the system to benefit from the high magnetoresistive performance of Heusler alloys while the non-magnetic spacer component protects against corrosion and Mn diffusion issues.

Inventive Principle:
Principle #40Composite materials

2Measurement precision

If Mn-containing Heusler alloys are used to improve magnetoresistive performance, then sensor sensitivity increases, but Mn migrates into adjacent layers causing performance degradation

Engineering Contradiction:
Improvemagnetoresistive performanceVSAvoidMn diffusion
Core Design Contradiction:
Measurement precisionVSStability of the object's composition

Solution Approach 1:

The non-magnetic spacer layer acts as a diffusion barrier that physically separates the Mn-containing Heusler alloy from adjacent magnetic layers. This intermediary structure allows the Heusler alloy to maintain its superior magnetoresistive properties while preventing Mn atoms from migrating into neighboring layers, thus preserving compositional stability.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

Thin non-magnetic spacer films are used to confine and isolate the Mn-containing Heusler alloy layers. These thin film barriers effectively prevent Mn diffusion while maintaining the overall sensor structure and enabling the Heusler alloy to exhibit its full magnetoresistive potential without compositional degradation.

Inventive Principle:
Principle #30Flexible shells and thin films

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for improved magnetoresistive performance while significantly reducing corrosion and Mn diffusion, enabling the realization of performance benefits from Heusler alloys in magnetoresistive sensors.

Implementation Method 1

a spin valve sensor, also referred to as a giant magnetoresistive (GMR) sensor

Methodology Applied
Scientific EffectGiant magnetoresistance (GMR): Magnetoresistance

Implementation Method 2

a portion of the conduction electrons is scattered by the interfaces of the spacer layer with each of the pinned and free layers

Methodology Applied
Scientific EffectSpin scattering: Scattering

Implementation Method 3

The magnetization of the pinned layer is pinned by exchange coupling with an antiferromagnetic layer

Methodology Applied
Scientific EffectExchange coupling:

Implementation Method 4

The thickness of the spacer layer is chosen to be less than the mean five path of conduction electrons through the sensor

Methodology Applied
Scientific EffectElectron scattering: Scattering

Data Source

PatentUS8988834B2Current perpendicular to plane magnetoresistive sensor employing half metal alloys for improved sensor performance
Publication Date: 2015.03.24 WESTERN DIGITAL TECHNOLOGIES INC
  • US8988834B2 patent drawing
  • US8988834B2 patent drawing
  • US8988834B2 patent drawing

AI summary

A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.