Magnetoresistive Element With Shift Cancelling Layer
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Solution Overview
Problem
Miniaturization of magnetic random access memory (MRAM) devices is hindered by increased coercivity of magnetic storage layers and reduced spin-polarized electron injection with decreasing element size, making it difficult to achieve both miniaturization and low electric current requirements.
Innovation Solution
The magnetoresistive element incorporates a shift cancelling layer with a first region and a second region surrounding it, containing a different element, along with a reference layer and a tunnel barrier layer, and employs oblique ion implantation to reduce damage and demagnetize the side faces, allowing for efficient magnetic reversal and reduced parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the element size is reduced for miniaturization, then the integration density is improved, but the coercivity of the magnetic storage layer increases and the write current increases
Solution Approach 1:
The patent applies local quality by creating a shift cancelling layer with spatially varying composition - the first region has a different alloy composition than the second region. This gradient structure allows different parts of the same layer to serve different functions: the first region provides magnetic anisotropy while the second region reduces demagnetizing fields at the edges, thereby reducing coercivity locally at the boundaries where it matters most for miniaturization
Solution Approach 2:
The shift cancelling layer is constructed as a composite material with two distinct regions having different alloy compositions (e.g., different ratios of Co, Pt, and other elements). This composite structure combines the benefits of high anisotropy from one composition with reduced edge effects from another, enabling simultaneous miniaturization and low write current operation
2Volume of moving object
If the element size is reduced for miniaturization, then the integration density is improved, but the spin polarized electron injection decreases
Solution Approach 1:
The shift cancelling layer creates local quality variations at the edges of the storage layer, where the different alloy composition in the second region specifically addresses the edge effects that cause spin polarization loss. This localized correction preserves spin polarized electron injection in the core region while enabling miniaturization
Solution Approach 2:
The shift cancelling layer acts as an intermediary structure between the storage layer and the surrounding environment. By positioning this layer with different composition at the edges, it mediates the interaction between the magnetized storage layer and external demagnetizing fields, thereby protecting the spin polarized electron injection process from edge-related degradation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient magnetic reversal with reduced switching fields and parasitic capacitance, facilitating miniaturization and low electric current operation in MRAM devices.
Implementation Method 1
a magnetoresistive effect element is a magnetic tunnel junction (MTJ) element including a three-layer multilayer structure
Implementation Method 2
an insulation film as a tunnel barrier
Implementation Method 3
a write (spin injection write) scheme using spin angular momentum movement in which the magnetization direction in the storage layer is reversed by passing a spin polarization current through the MTJ element itself
Implementation Method 4
a magnetic-field write scheme in which only the magnetization direction in the storage layer is reversed by a current magnetic field that is generated when a current flowing is flowed through a write line
Data Source
AI summary
According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer. The reference layer includes a first region, and a second region provided outside the first region to surround the same. The second region contains an element contained in the first region and another element being different from the element. The magnetoresistive element further includes a storage layer, and a tunnel barrier layer provided between the reference layer and the storage layer. The storage layer is free from the another element.