Magnetron Sputtering Layout for Stable Plasma Voltage
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Solution Overview
Problem
Magnetron sputtering apparatuses face challenges in maintaining consistent voltage applied to targets during plasma formation, leading to variations in plasma intensity and potential operational stops due to excessive voltage.
Innovation Solution
The apparatus employs a controller to synchronize the movement of magnet arrays between selected and unselected sputtering mechanisms, ensuring that their extension lines intersect or remain distant, thereby minimizing magnetic field interference and stabilizing the voltage applied to the targets.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple magnet mechanisms are arranged in the chamber to enable multi-target sputtering, then the productivity and versatility of the apparatus is improved, but the magnetic field from unselected magnet mechanisms interferes with the plasma formation in selected mechanisms, causing voltage variation and potential operational stops
Solution Approach 1:
The patent extracts and removes the magnetic field from unselected magnet mechanisms by positioning them outside the chamber or deactivating them during film formation. This eliminates the harmful magnetic field interference while maintaining the capability to use multiple targets, thus resolving the contradiction between versatility and voltage stability.
Solution Approach 2:
The patent applies local quality by creating a differentiated magnetic field environment: selected magnet mechanisms operate with strong magnetic fields inside the chamber for plasma formation, while unselected mechanisms are positioned outside or deactivated to provide no magnetic field interference. This spatial differentiation of magnetic field presence resolves the contradiction.
2Reliability
If partition members and shutters made of magnetic material are used to isolate magnetic fields, then the magnetic field interference is reduced, but the device complexity and structural requirements increase
Solution Approach 1:
Instead of adding complex partition structures inside the chamber, the patent extracts the unselected magnet mechanisms outside the chamber entirely. This eliminates the need for magnetic shielding partitions and complex shutters, reducing device complexity while achieving effective magnetic field isolation.
Solution Approach 2:
The patent moves unselected magnet mechanisms from the internal chamber space to an external location, utilizing the spatial dimension outside the chamber. This dimensional relocation achieves magnetic field isolation without requiring complex internal partition structures.
3Device complexity
If the magnetic field from unselected mechanisms is not isolated, then the apparatus structure remains simple, but the voltage applied to targets varies excessively, causing plasma formation issues and operational stops
Solution Approach 1:
The patent extracts unselected magnet mechanisms outside the chamber, achieving magnetic field isolation with minimal structural complexity. This approach maintains apparatus simplicity while ensuring stable voltage application and reliable plasma formation by eliminating magnetic field interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses voltage variations, allowing for higher power supply to the electrode forming plates while preventing operational stops, thus enhancing the efficiency and stability of film formation on semiconductor wafers.
Implementation Method 1
a magnet array, and a moving mechanism configured to reciprocate the magnet array between a first position and a second position on the other surface of the target
Implementation Method 2
a power supply configured to form plasma by supplying power to a target of each of selected sputtering mechanisms
Implementation Method 3
a magnetron sputtering apparatus... performing magnetron sputtering... perform film formation on the substrate
Data Source
AI summary
A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.