Magnetron Target Sintering with Differential Thermal Expansion
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Solution Overview
Problem
Current Facing Target Sputtering (FTS) methods are limited in producing complex metal oxide targets with curved or cylindrical geometries due to high production costs and sub-optimal shapes, which restrict deposition rate and efficiency.
Innovation Solution
The system employs materials with differential coefficients of expansion to achieve controlled pressure and size during sintering, allowing for the creation of complex shapes at a lower cost by varying the inner pressure ring with temperature while maintaining a constant outer casing, and uses a circular configuration to maintain a constant magnetic field and process pressure, enabling larger target plate separations and increased deposition area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional FTS methods use simple geometries like parallelepipedal plates for magnetron targets, then manufacturing cost is reduced, but deposition rate and efficiency are limited due to sub-optimal shapes
Solution Approach 1:
The patent applies parameter changes by utilizing the differential coefficient of thermal expansion between the inner pressure ring and outer casing materials. By selecting materials with different expansion coefficients (inner ring: 10-20×10^-6/°C, outer casing: 5-10×10^-6/°C), the system transforms temperature changes into mechanical pressure changes, enabling complex curved geometries to be manufactured cost-effectively while optimizing deposition performance
2Productivity
If complex curved geometries and cylindrical targets are used to optimize magnetron design, then deposition rate and cooling flow are maximized, but manufacturing cost becomes prohibitive requiring specialized presses for each shape
Solution Approach 1:
The patent directly applies thermal expansion principles by designing a sintering apparatus where the inner pressure ring and outer casing have different thermal expansion coefficients. During sintering, temperature changes cause differential expansion that generates controlled pressure on the target material, enabling complex curved geometries to be formed without expensive specialized presses. The expansion difference creates the necessary compaction force during the sintering process
Solution Approach 2:
The patent uses composite materials by combining different materials with specific thermal expansion properties in the sintering apparatus structure. The inner pressure ring uses materials with higher thermal expansion coefficients (10-20×10^-6/°C) while the outer casing uses materials with lower coefficients (5-10×10^-6/°C), creating a composite structure that converts thermal energy into mechanical pressure for cost-effective manufacturing of complex geometries
3Area of stationary object
If larger target plate separations are implemented, then deposition area and coverage are increased, but magnetic field uniformity and process pressure control become more difficult
Solution Approach 1:
The patent applies dynamics by making the pressure application mechanism temperature-dependent rather than static. The differential thermal expansion of the inner pressure ring and outer casing creates dynamic pressure adjustment during sintering, allowing the system to adapt to larger target plate separations while maintaining magnetic field uniformity and process pressure control through thermally-driven mechanical adjustment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for multiple complex metal oxide magnetron shapes at a significantly lower cost, increasing deposition rate, productivity, and reliability by enabling larger coverage areas and symmetrical scalability, thus overcoming the limitations of conventional FTS systems.
Implementation Method 1
uses differential coefficient of expansion of materials to achieve the necessary controlled pressure and size during the sintering step. By changing the size of the inner pressure ring with temperature while the outer casing is kept at constant shape (a low expansion alloy), a large force can be exerted on the sintered material.
Implementation Method 2
FTS (Facing Target Sputtering) method is a semiconductor fabrication technique that provides high density plasma, high deposition rate at low working gas pressure to form high quality thin film.
Data Source
AI summary
Systems and methods are disclosed for face target sputtering to fabricate semiconductors by providing one or more materials with differential coefficients of expansion in the FTS chamber; and generating a controlled pressure and size with the one or more materials during sintering.