Magnonic Memory Using Spin-Wave Paths for High-Density Storage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional data storage systems face limitations in data capacity, infrastructure cost, and power consumption, with existing memory architectures failing to efficiently utilize the full potential of memory cell combinations for increased storage density.
Innovation Solution
A magnonic combinatorial memory (MCM) system that stores data using the collective arrangement of magnetic memory cells, leveraging spin wave propagation paths and phase shifts to encode information, allowing for factorial scaling of storage capacity beyond conventional linear scaling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional linear scaling of memory cells is used, then device complexity is low, but data storage density is limited
Solution Approach 1:
The patent transitions from conventional linear/2D memory cell arrangements to a combinatorial configuration where N memory cells generate factorial (N!) storage capacity through collective arrangement states. This dimensional change in the storage mechanism allows exponential scaling of data capacity without proportional increases in physical cell count or structural complexity
Solution Approach 2:
The patent merges the individual states of N memory cells into a collective combinatorial system where the arrangement of cells themselves encodes information. By combining the positional and configurational states of multiple cells, the system achieves factorial scaling of storage density while maintaining manageable device complexity through unified read/write operations
2Quantity of substance
If more memory cells are added to increase storage capacity, then data storage density increases, but power consumption increases
Solution Approach 1:
The patent achieves high storage density with a relatively small number of memory cells by exploiting combinatorial arrangements. Instead of requiring excessive numbers of cells for linear scaling, the factorial configuration allows N cells to store N! states, reducing the total cell count needed and thereby lowering overall power consumption while maintaining high storage density
3Quantity of substance
If more memory cells are added to increase storage capacity, then data storage density increases, but infrastructure cost increases
Solution Approach 1:
The patent introduces a combinatorial dimension to memory organization where the arrangement configuration of cells becomes the storage mechanism. This allows achieving high storage density without proportionally increasing the physical infrastructure, as N cells in combinatorial arrangement provide N! storage states rather than linear N states
Solution Approach 2:
The memory cells in the combinatorial configuration serve multiple functions simultaneously: individual storage units, positional elements in collective arrangements, and configurable components that can form different path patterns. This multi-functionality reduces the need for additional specialized infrastructure components, lowering overall system complexity and cost
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
MCM achieves significantly higher data storage density by exploiting all possible memory cell combinations, with the potential to store all human-generated information using a 100×100 magnet array, offering robust operation with a 35 dB On/Off ratio for path detection.
Implementation Method 1
leveraging spin wave propagation paths and phase shifts to encode information
Implementation Method 2
leveraging spin wave propagation paths and phase shifts to encode information
Data Source
AI summary
A data storage apparatus includes N memory cells, where N is an integer greater than 1. Each memory cell is controllable to conform to a plurality of path arrangements. The data storage apparatus is configured to store data using a collective path arrangement of the N memory cells. One example implementation uses spin wave propagation routes to store the data.