Main Roll Cover Pressure Control for Thin-Film Gas Leakage
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Solution Overview
Problem
Existing thin-film forming devices face issues with poor film quality due to thin-film material gas leakage between adjacent film formation chambers, particularly when using CVD, which affects the purity and quality of the thin films formed.
Innovation Solution
A thin-film forming device with a main roll cover that sets the pressure inside the main roll cover higher than the film formation chambers, preventing gas leakage by using inert gas to maintain high pressure and minimize gas transfer between chambers, and optimizing the cover gap to reduce pressure loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the partition walls are positioned as close as possible to the main roll to maximize film formation space, then the area for thin film formation is improved, but gas leakage between chambers occurs through the gap affecting film purity
Solution Approach 1:
The patent introduces an inert gas (nitrogen or argon) as an intermediary substance filled in the gap between the partition wall and the main roll. This inert gas acts as a barrier that prevents the thin film material gas from leaking into adjacent chambers while maintaining the partition wall's position close to the main roll for maximum film formation area.
Solution Approach 2:
The patent creates an inert atmosphere in the gap between the partition wall and main roll by filling it with inert gas. This inert environment prevents contamination and gas leakage between chambers, solving the problem of maintaining both large film formation area and high film purity simultaneously.
2Object-affected harmful factors
If a roller is provided between partitions and main roll to eliminate gaps, then gas leakage is prevented, but the roller contacts the thin film causing quality deterioration
Solution Approach 1:
Instead of using a physical roller that contacts the thin film, the patent uses inert gas as an intermediary substance that fills the gap and prevents gas leakage without contacting or damaging the thin film surface.
Solution Approach 2:
The patent replaces the mechanical roller system with a gas-based pressure control system. The inert gas pressure in the gap prevents thin film material gas from leaking while avoiding mechanical contact that would damage the thin film quality.
3Productivity
If CVD is used for film formation, then film formation capability is improved, but pressure inside chambers is higher causing greater gas leakage probability
Solution Approach 1:
The patent uses inert gas to create a pressure-controlled environment in the gap that counteracts the high pressure from CVD processes. The inert gas pressure prevents thin film material gas from leaking into adjacent chambers even during high-pressure CVD film formation.
Solution Approach 2:
The patent controls the pressure parameter of the inert gas in the gap to match or exceed the pressure from CVD processes. By adjusting the inert gas pressure, the system prevents gas leakage while maintaining effective CVD film formation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses the movement of thin-film material gas into adjacent chambers, maintaining the purity and quality of the thin films formed, ensuring consistent film quality without compromising the film formation process.
Implementation Method 1
the pressure inside the main roll cover produced at the main roll cover and the outer peripheral face of the main roll is set to be higher than the pressure in the film formation chambers
Data Source
AI summary
A thin-film forming device forms a thin film on a strip-shaped substrate by subjecting the strip-shaped substrate to a surface treatment while conveying the strip-shaped substrate in a state of being laid along an outer peripheral face of a main roll. The thin-film forming device comprises: a main roll chamber accommodating the main roll; a plurality of film formation chambers arranged in a peripheral direction of the main roll, the film formation chambers having partitions disposed radially outward of the main roll; and a main roll cover covering the outer peripheral face of the main roll over which the strip-shaped substrate travels, the main roll cover being provided to the partitions, the main roll cover having a film formation chamber communication component that communicates with the film formation chambers. A pressure in an interior of the main roll cover defined between the main roll cover and the outer peripheral face of the main roll is set to be higher than a pressure in the film formation chambers.


