Mandrel Pattern Generation Using Anchor Bar Alignment

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Solution Overview

Problem

The conventional method for generating layout patterns for non-planar transistors, such as FinFETs, requires separate calculations for each cluster region due to misalignment of fin structures, leading to increased calculation time and complexity.

Innovation Solution

The method employs anchor bar patterns to simplify the calculation process by aligning their edges with adjacent stripe patterns and overlapping spaces between them, allowing for simultaneous handling of stripe patterns in different cluster regions to generate mandrel patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If separate calculations are performed for each cluster region to generate mandrel patterns, then the fin structures can be accurately aligned within each region, but the calculation time and process complexity increase significantly

Engineering Contradiction:
Improvefin structure alignment accuracyVSAvoidcalculation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The chip is divided into multiple cluster regions, and anchor bar patterns are introduced as reference structures for each cluster. The method segments the calculation process by using pre-defined anchor bars as alignment references, allowing each cluster's fin structures to be positioned relative to its anchor bar rather than requiring global coordinate calculations across all clusters

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Anchor bar patterns are pre-defined and placed in each cluster region before generating the mandrel patterns. These anchor bars serve as pre-established reference structures that simplify subsequent alignment calculations, eliminating the need for complex inter-cluster coordinate transformations

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If separate calculations are performed for each cluster region, then accurate mandrel pattern generation is achieved, but the overall process complexity increases

Engineering Contradiction:
Improvemandrel pattern accuracyVSAvoidcalculation process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The calculation process is segmented into independent cluster-based operations using anchor bar patterns. Each cluster's mandrel patterns are generated relative to its local anchor bar reference, creating modular, independent calculation units that reduce overall process complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Anchor bar patterns serve as intermediary reference structures between the global chip layout and local fin structure definitions. These intermediaries provide a simplified coordinate reference system that mediates the alignment process, reducing the complexity of direct inter-cluster calculations

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS9672309B2Method for generating layout pattern
Publication Date: 2017.06.06 UNITED MICROELECTRONICS CORP
  • US9672309B2 patent drawing
  • US9672309B2 patent drawing
  • US9672309B2 patent drawing

AI summary

A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.