Mandrel Spacer Patterning for Multi-Pitch IC Manufacturing

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Solution Overview

Problem

The challenge in semiconductor integrated circuit (IC) manufacturing lies in effectively and efficiently designing mandrel patterns for IC layouts with abutting blocks that have varying pattern pitches, as existing spacer techniques struggle to accommodate different pitches across block boundaries, leading to complexity and inefficiency in the manufacturing process.

Innovation Solution

A method is introduced that involves generating mandrel pattern candidates to fill spaces between target patterns, assigning priorities, coloring them with specific colors, and removing certain candidates to produce mandrel patterns suitable for mask fabrication, allowing for efficient handling of varying pattern pitches across block boundaries.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If traditional spacer techniques with two masks are used to double exposed patterns, then pitch reduction is achieved, but designing mandrel patterns for abutting blocks with varying pitches becomes complex and inefficient

Engineering Contradiction:
Improvepitch reductionVSAvoidmandrel pattern design complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent segments the mandrel pattern design into multiple candidate patterns, each optimized for specific block configurations. By dividing the overall patterning task into discrete candidate mandrels that can be selectively applied to different abutting blocks, the system handles varying pitches without requiring a completely new design approach for each configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent changes the parameters of mandrel patterns by generating multiple candidate patterns with different geometries, pitches, and configurations. This allows the selection of appropriate mandrel parameters for each specific block arrangement, enabling efficient handling of varying pitches across abutting blocks while maintaining manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If multiple blocks with different pattern pitches are abutted to save wafer area, then device integration increases, but the manufacturing process complexity increases

Engineering Contradiction:
Improvedevice integrationVSAvoidmanufacturing process complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent performs preliminary actions by pre-generating multiple candidate mandrel patterns that account for various block pitch configurations before actual manufacturing. This advance preparation allows for rapid selection and application of appropriate mandrels during production, increasing device integration while avoiding the need for complex real-time adjustments during the manufacturing process.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent creates a universal set of candidate mandrel patterns that can serve multiple functions across different block configurations. These candidate mandrels are designed to be applicable to various pitch requirements and block arrangements, allowing the same manufacturing infrastructure to handle diverse integration scenarios without requiring specialized processes for each case.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Quantity of substance

If spacer patterns are formed on sidewalls of mandrel patterns to reduce pitch, then pattern density increases, but the ability to accommodate different pitches across block boundaries is limited

Engineering Contradiction:
Improvepattern densityVSAvoidpitch accommodation flexibility
Core Design Contradiction:
Quantity of substanceVSAdaptability or versatility

Solution Approach 1:

The patent applies local quality by generating candidate mandrel patterns with specific local characteristics optimized for different block pitch requirements. Each candidate mandrel has tailored dimensions, spacing, and geometries suited for particular local configurations of abutting blocks, enabling the system to achieve high pattern density while maintaining adaptability to varying pitches across different regions of the wafer.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9911606B2Mandrel spacer patterning in multi-pitch integrated circuit manufacturing
Publication Date: 2018.03.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US9911606B2 patent drawing
  • US9911606B2 patent drawing
  • US9911606B2 patent drawing

AI summary

A method of manufacturing an integrated circuit (IC) includes receiving a design layout of the IC, wherein the design layout includes two abutting blocks, the two blocks include target patterns, and the target patterns have different pitches in the two blocks. The method further includes generating mandrel pattern candidates in spaces between adjacent target patterns, and assigning first and second colors to the mandrel pattern candidates according to their priorities. The method further includes removing the mandrel pattern candidates assigned with the second color, and outputting a mandrel pattern in computer-readable format for mask fabrication. The mandrel pattern includes the mandrel pattern candidates that are colored with the first color.