Manganese-Doped Barrier Layer for Reliable Semiconductor Interconnects
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Solution Overview
Problem
The challenge of forming reliable semiconductor devices at smaller sizes is exacerbated by the increasing complexity of fabrication processes due to reduced feature sizes, which affects the reliability and yield of conductive lines.
Innovation Solution
Incorporating a barrier layer with manganese doping in the seed and conductive layers, followed by annealing processes using hydrogen-rich gases to enhance electromigration resistance and improve the adhesion between layers, thereby reducing resistance and improving the reliability of conductive lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are reduced to increase functional density, then production efficiency is improved and costs are lowered, but fabrication process complexity increases and reliability deteriorates
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition and doping concentration of the barrier layer. Specifically, manganese doping is introduced at controlled concentrations (e.g., 1-10 at%) to alter the electrical and mechanical properties of the barrier layer, thereby improving electromigration resistance and adhesion without requiring further feature size reduction
Solution Approach 2:
The patent employs composite materials by creating a multi-layered structure consisting of a barrier layer with manganese doping embedded within the conductive interconnect system. This composite approach combines the conductive properties of copper or cobalt with the barrier properties of manganese-doped materials, achieving both electrical functionality and improved reliability against electromigration
2Productivity
If feature sizes are reduced to increase functional density, then scaling benefits are achieved, but fabrication process difficulty increases
Solution Approach 1:
The patent applies preliminary action by forming the manganese-doped barrier layer before depositing the conductive material. This pre-prepared barrier structure with optimized doping concentration and crystal orientation is established in advance, simplifying subsequent fabrication steps and improving process control at scaled dimensions
3Ease of manufacture
If conventional barrier layers are used without manganese doping, then fabrication is simpler, but electromigration resistance is insufficient
Solution Approach 1:
The patent applies local quality by concentrating manganese doping specifically at the interface regions where electromigration is most problematic. The doping concentration is locally optimized in the barrier layer adjacent to the conductive material, while other regions maintain simpler compositions, thereby targeting the critical failure points without complicating the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The manganese-doped barrier layer enhances the electromigration resistance and adhesion, leading to improved yield and reliability of conductive lines, reducing their resistance and enhancing the overall performance of semiconductor devices.
Implementation Method 1
annealing the seed layer in a first process gas including a first hydrogen gas... and the manganese diffuses from the seed layer to the barrier layer during the annealing of the seed layer
Implementation Method 2
annealing the seed layer in a first process gas including a first hydrogen gas... annealing the conductive layer in a second process gas including a second hydrogen gas
Data Source
AI summary
A semiconductor device structure is provided. The semiconductor device structure includes a dielectric layer. The semiconductor device structure includes a barrier layer in the dielectric layer. The barrier layer is doped with manganese, the barrier layer has a central portion and a first peripheral portion, the first peripheral portion is between the dielectric layer and the central portion, and a first manganese concentration of the central portion is greater than a second manganese concentration of the first peripheral portion. The semiconductor device structure includes a conductive layer in the barrier layer.