Manganese-Modified Copper Interconnects for Reliable Microelectronic Connections
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Solution Overview
Problem
As microelectronic devices shrink in size, forming reliable electrical connections between conductive components becomes increasingly difficult due to challenges in feature sizing and spacing, leading to complications in routing and interconnect structures, particularly as the number of memory cells increases.
Innovation Solution
Incorporating manganese into conductive interconnect structures, where a seed material with a specific atomic percentage of manganese is used to form interconnects and contacts, and subsequent annealing in a hydrogen atmosphere to diffuse manganese, increasing its concentration at interfaces between conductive materials, thereby enhancing electrical continuity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size and spacing are reduced to increase integration density, then device integration level increases, but manufacturing precision and reliability of electrical connections deteriorate
Solution Approach 1:
The patent applies local quality by introducing manganese specifically at the interface region between conductive materials, rather than uniformly throughout the structure. This localized modification targets the critical area where electrical continuity is most problematic, improving connection reliability without affecting the overall miniaturization benefits.
Solution Approach 2:
The patent changes the compositional parameter of the conductive structure by incorporating manganese at specific concentrations (e.g., 0.1-5 atomic percent) at the interface. This parameter change modifies the electrical and structural properties of the interface region, enabling reliable electrical connections at smaller dimensions.
2Volume of moving object
If feature size shrinks to increase device density, then device compactness improves, but reliability of electrical connections deteriorates
Solution Approach 1:
The invention applies local quality by concentrating manganese at the conductive material interface, creating a localized region with enhanced electrical properties. This allows the overall device to remain compact while the specific interface region provides reliable electrical connection.
Solution Approach 2:
The patent creates a composite conductive structure by combining copper (or other conductive material) with manganese at the interface. This composite approach leverages the high conductivity of copper while adding manganese's beneficial effects on interface stability and electrical continuity, achieving reliable connections in compact dimensions.
3Productivity
If number of memory cells increases to improve device functionality, then device performance improves, but complexity of routing and interconnect structures increases
Solution Approach 1:
The patent changes the compositional parameter of interconnect structures by incorporating manganese, which improves electrical continuity and reduces void formation. This allows for more reliable routing structures that can handle increased complexity from additional memory cells without proportionally increasing overall device complexity.
4Productivity
If critical dimensions are reduced to increase device density, then integration level increases, but difficulty of forming reliable electrical connections increases
Solution Approach 1:
The invention applies local quality by introducing manganese specifically at the interface region where electrical connections are formed. This localized modification makes the connection formation process more reliable at smaller dimensions without requiring changes to the overall manufacturing process complexity.
Solution Approach 2:
The patent applies preliminary action by incorporating manganese into the conductive structure during the formation process, before subsequent manufacturing steps. This preliminary incorporation of manganese prepares the interface for reliable electrical connection formation, easing subsequent manufacturing operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces voids and electrical discontinuities, improving the reliability and continuity of electrical connections between conductive interconnects and contacts, facilitating more efficient and reliable microelectronic device performance.
Implementation Method 1
subsequent annealing in a hydrogen atmosphere to diffuse manganese, increasing its concentration at interfaces between conductive materials
Implementation Method 2
exposing the microelectronic device to annealing conditions
Data Source
AI summary
A microelectronic device comprises a first conductive material comprising copper, a conductive plug comprising tungsten in electrical communication with the first conductive material, and manganese particles dispersed along an interface between the first conductive material and the conductive plug. Related electronic systems and related methods are also disclosed.