Substrate Processing Manifold Cr2O3 Film for Copper Diffusion
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Solution Overview
Problem
Metal contamination, particularly copper (Cu), from exposed metallic components in substrate processing apparatuses leads to defects in semiconductor devices due to out diffusion during film formation, despite efforts to form oxidation films like NiO, as these films are not effective in blocking Cu diffusion and react with reactive gases.
Innovation Solution
Subjecting the metallic components, such as the manifold, to baking treatment at a pressure less than atmospheric pressure forms Cr2O3 or SiOCr films, which are non-reactive with gases and effectively block Cu out diffusion, preventing metal contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If an NiO film is formed on the metallic component surface by heating in oxygen atmosphere, then Fe out diffusion is suppressed, but Cu out diffusion occurs and metal contamination still happens
Solution Approach 1:
The patent changes the chemical composition of the oxidation film by controlling the alloy composition of the metallic component. By adjusting the Cr content to 10-20 mass% and Fe content to 3-8 mass%, the film transforms from NiO (which allows Cu diffusion) to Cr2O3 (which blocks Cu diffusion), resolving the contradiction between suppressing Fe diffusion and preventing Cu contamination
Solution Approach 2:
The patent creates a composite protective film with specific composition (Cr2O3 as main component with NiO) that combines the benefits of both oxides: Cr2O3 blocks Cu diffusion while NiO provides additional protection against Fe diffusion, achieving comprehensive contamination prevention
2Temperature
If metallic components are used for furnace opening parts, then heat resistance and corrosion resistance are achieved, but metal out diffusion causes substrate contamination
Solution Approach 1:
The patent introduces an oxidation film as an intermediary layer between the metallic component and the substrate. This film acts as a barrier that prevents direct contact and diffusion of metal atoms from the metallic component to the substrate, while allowing the metallic component to maintain its heat resistance functions
Solution Approach 2:
The patent changes the chemical parameters of the surface film by controlling alloy composition. By optimizing Cr and Fe content, the film composition changes from NiO-dominant to Cr2O3-dominant, fundamentally altering the diffusion blocking properties while maintaining the metallic component's structural integrity and heat resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The Cr2O3 or SiOCr films significantly reduce metal contamination, enabling lower Cu levels in semiconductor devices and improving productivity and quality by preventing defective operations caused by Cu out diffusion.
Implementation Method 1
a metallic component is heated beforehand for 4 hours to a temperature of 40° C. or greater in an atmosphere containing oxygen at atmospheric pressure or under a reduced pressure, so that an oxidation film is formed on a surface of the metallic component
Implementation Method 2
the metallic component is heated beforehand for 4 hours to a temperature of 40° C. or greater
Data Source
AI summary
There is provided a substrate processing apparatus equipped with a metallic component, with at least a part of its metallic surface exposed to an inside of a processing chamber and subjected to baking treatment at a pressure less than atmospheric pressure. As a result of this baking treatment, a film which does not react with various types of reactive gases, and which can block the out diffusion of metals, is formed on the surface of the above-mentioned metallic component.