Mask Aligner Lithography with Exposure-Dose Matching
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Solution Overview
Problem
The oxidation and atomization of mirrors or lenses in a mask aligner due to constant laser irradiation lead to decreased exposure intensity, resulting in prolonged exposure times and reduced production capability, necessitating costly mirror replacements.
Innovation Solution
A lithography method that determines the exposure intensity of a mask aligner, sets a target preset interval based on this intensity, and selects wafers with matching exposure doses to maintain consistent exposure times, thereby optimizing production capability and reducing mirror replacement costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the mask aligner operates continuously with constant laser irradiation, then production volume increases, but exposure intensity decreases due to oxidation and atomization of mirrors or lenses
Solution Approach 1:
The system performs preliminary determination of exposure intensity and establishes target preset intervals before actual lithography operations. By pre-categorizing wafers into different exposure dose groups and pre-determining which preset interval the current exposure intensity falls into, the system prepares in advance to match appropriate wafers with the current optical condition, preventing exposure time increases before they occur.
Solution Approach 2:
The system changes operational parameters by adjusting the matching between exposure dose and wafer type based on current exposure intensity. Instead of maintaining fixed exposure parameters, the system dynamically selects different target exposure doses and corresponding wafer categories according to the measured exposure intensity and its preset interval, adapting the lithography process to current optical component conditions.
2Manufacturing precision
If exposure intensity decreases due to mirror or lens degradation, then exposure time increases, but production capability is reduced
Solution Approach 1:
The system implements feedback by continuously determining the exposure intensity of the mask aligner and using this information to adjust subsequent lithography operations. The exposure intensity measurement feeds back into the decision-making process for selecting target exposure doses and matching wafers, creating a closed-loop control system that maintains production efficiency despite optical component degradation.
Solution Approach 2:
The system pre-establishes multiple preset intervals with corresponding target exposure doses before operations begin. By having these intervals and corresponding wafer categories predetermined, the system can quickly match appropriate wafers to current conditions without real-time calculation delays, maintaining high production capability while ensuring accurate exposure doses.
3Productivity
If the mask aligner processes more wafers, then production volume increases, but mirror replacement costs increase due to accelerated degradation
Solution Approach 1:
The system changes operational parameters by adjusting exposure doses and processing conditions based on monitored exposure intensity. By operating within optimized parameter ranges determined by the preset intervals and current intensity levels, the system reduces stress on optical components while maintaining production volume, thereby extending mirror lifespan without sacrificing productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures efficient use of the mask aligner by matching exposure doses with appropriate wafers, preventing increased exposure times and minimizing the need for mirror replacements, thus enhancing production efficiency and reducing costs.
Implementation Method 1
as the beam of light of the laser constantly irradiates the mirrors or lenses in the optical path, the mirrors or lenses will undergo oxidation reaction and produce atomization
Data Source
AI summary
Embodiments of the present disclosure disclose a lithography method, a lithography apparatus, and a computer storage medium. The method includes: determining an exposure intensity of a mask aligner; determining a target preset interval corresponding to the mask aligner according to the exposure intensity; determining, according to the target preset interval, at least one target wafer for which at least one exposure dose is a target exposure dose, the target preset interval has a corresponding relationship with the target exposure dose; and performing lithography process on the at least one target wafer by using the mask aligner.