Microlithography Mask Characterization via Reflection Mode

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Solution Overview

Problem

Characterizing microlithographic wafers or masks in three dimensions is challenging due to unwanted defects and the limitations of existing methods, particularly in transmission mode for x-ray wavelengths, where absorption effects hinder three-dimensional microscopic characterization.

Innovation Solution

A method involving illumination with a high numerical aperture and a multiple layer model for simulating diffraction images, allowing for three-dimensional characterization in reflection mode, where the illumination and detection occur on the same side of the object, facilitating a high-resolution reconstruction of the refractive index profile and interface reflectivities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If transmission mode characterization is used for x-ray wavelengths, then three-dimensional microscopic characterization can be achieved, but absorption effects of substrate materials prevent successful characterization

Engineering Contradiction:
Improvethree-dimensional microscopic characterizationVSAvoidabsorption effect
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The patent inverts the conventional transmission mode by using reflection mode characterization. Instead of illuminating the sample from one side and detecting from the opposite side, the illumination device and detector device are positioned on the same side of the object plane, detecting reflected diffraction images to achieve three-dimensional characterization without suffering from substrate absorption effects

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent changes the operational parameters by working in the reflection regime rather than transmission regime for x-ray wavelengths. This parameter change allows the electromagnetic radiation to interact with the sample in a manner that avoids absorption by substrate materials while still enabling three-dimensional refractive index profile reconstruction

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If high numerical aperture illumination is used to achieve large angle of incidence ranges, then three-dimensional resolution is improved, but rotation of the object becomes necessary which may not be desirable

Engineering Contradiction:
Improvethree-dimensional resolutionVSAvoidobject rotation
Core Design Contradiction:
Measurement precisionVSEase of operation

Solution Approach 1:

The patent achieves large angle of incidence ranges by utilizing the angular space in the reflection geometry rather than rotating the object. By positioning the illumination and detection systems on the same side and using appropriate optical paths, the system accesses a wide range of incidence angles through the reflection process itself, eliminating the need for object rotation while maintaining three-dimensional resolution

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If comprehensive mask characterization is performed before mass production, then imaging capability can be verified, but the complexity and time required for characterization increases

Engineering Contradiction:
Improveimaging capability verificationVSAvoidcharacterization time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent enables comprehensive three-dimensional mask characterization to be performed efficiently by using a continuous measurement process in reflection mode. The method captures complete diffraction information from multiple angles and wavelengths in a systematic manner, allowing full characterization without requiring multiple separate measurement steps or object manipulation, thus reducing characterization time while maintaining reliability

Inventive Principle:
Principle #20Continuity of useful action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables three-dimensional microscopic characterization with high resolution and accuracy, overcoming the limitations of existing methods by providing a suitable algorithm for evaluating measurement results and reconstructing object parameters, thus ensuring reliable imaging capability before mass production.

Implementation Method 1

a detector device for capturing a respective intensity distribution in a diffraction image produced by the object

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 2

the illumination device and the detector device are arranged on the same side of the object such that the diffraction image is captured in reflection

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS11269260B2Method and assembly for characterizing a mask or a wafer for microlithography
Publication Date: 2022.03.08 CARL ZEISS SMT GMBH
  • US11269260B2 patent drawing
  • US11269260B2 patent drawing
  • US11269260B2 patent drawing

AI summary

A method includes using an illumination device to illuminate an object with electromagnetic radiation produced by a radiation source, and using a detector device to capture a respective intensity distribution in a diffraction image produced by the object in a plurality of measurement steps. The measurement steps differ from one another with respect to the illumination setting set by the illumination device. The method also includes determining at least one characteristic variable that is characteristic for the object on the basis of an iteratively performed comparison between the measurement values obtained within the scope of the measurement steps and model-based simulated values. The model-based simulated values are ascertained on the basis of a multiple layer model, in which the object is modeled by a multiple layer structure made of layers that are respectively separated from one another by an interface, wherein a location-dependent reflectivity is assigned to the interfaces.