Mask Pattern Correction Excluding TEG Areas to Prevent Slits
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Solution Overview
Problem
The existing methods for optical proximity correction (OPC) in mask pattern design often result in slits at the joints between merged scribe line and die areas, affecting the quality of the mask and subsequent exposure effects.
Innovation Solution
A method and apparatus for correcting mask patterns that exclude performing optical proximity correction on Test Element Group (TEG) areas, allowing extra polygon edges of corrected die and scribe line sub-areas to extend to the TEG areas, thereby avoiding slits in the final pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction is performed on the entire initial pattern including TEG areas, then the correction coverage is complete, but slits are generated at the joints between scribe line and die areas
Solution Approach 1:
The patent segments the initial pattern into multiple areas: die areas, scribe line areas, and TEG areas. By performing OPC separately on die areas and scribe line areas while excluding TEG areas, the method avoids slit generation at joints while maintaining correction effectiveness in critical regions.
Solution Approach 2:
The patent applies different OPC treatment to different regions: full correction on die areas, full correction on scribe line areas, and no correction on TEG areas. This localized quality approach ensures that correction is applied where needed while avoiding harmful effects in specific zones.
2Manufacturing precision
If optical proximity correction is performed on scribe line and die areas separately and then merged, then correction can be applied to both regions, but slits are produced at the joint between merged areas
Solution Approach 1:
The patent extracts the TEG areas from the correction process. By removing TEG areas from the OPC treatment scope, the method eliminates the source of slit generation while maintaining correction on the essential die and scribe line areas.
Solution Approach 2:
The patent performs preliminary segmentation of the pattern into die areas, scribe line areas, and TEG areas before applying OPC. This preliminary action allows the correction algorithm to target only the appropriate regions, preventing slit formation before it occurs.
Data Source
AI summary
A method for correcting a mask patter includes: acquiring an initial pattern of a mask, the initial pattern including a scribe line area and die areas which are spaced, and the scribe line area is located between two adjacent die areas, each of the die areas includes at least one die sub-area and at least one first sub-test element group (TEG) area, and the scribe line area includes scribe line sub-areas and second sub-TEG areas, the first sub-TEG area and the second sub-TEG area are adjacent to each other, and the first sub-TEG area and the second sub-TEG area constitute a TEG area; performing an optical proximity correction (OPC) on an area of the initial pattern excluding TEG areas, so as to acquire a final pattern.