Optical Property Determination for Lithographic Mask Deposition Materials
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Solution Overview
Problem
The semiconductor industry faces challenges in determining the optical properties of very thin deposition materials used for lithographic masks, especially in the EUV wavelength range, due to the complexity and cost of existing measurement methods, which are not commonly available in semiconductor factories.
Innovation Solution
A method that determines the optical properties of deposition materials by measuring reflectivity values at different deposition heights using optical inspection systems, adapting simulated data to experimental values, and using photons of the actinic wavelength to ensure accuracy and relevance to the mask's operating conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If synchrotron sources are used for measuring optical properties, then measurement precision is improved, but device complexity and cost increase
Solution Approach 1:
The patent creates a virtual copy of the synchrotron measurement environment by using computational simulations that replicate the optical measurement process. Instead of physically accessing a synchrotron facility, the invention uses simulated reflectivity data that mimics what would be obtained from synchrotron measurements, thereby achieving comparable precision without the complexity and cost of actual synchrotron equipment.
Solution Approach 2:
The patent introduces an intermediary computational model that bridges the gap between available industrial measurement tools and the precision requirements for optical property determination. The simulation software acts as an intermediary, translating measurements from standard optical inspection systems into accurate optical property values that would otherwise require synchrotron facilities.
2Measurement precision
If multiple deposition heights are measured, then optical property determination accuracy is improved, but measurement time and process complexity increase
Solution Approach 1:
The patent performs preliminary computational simulations to establish the relationship between deposition height and reflectivity measurements before actual measurements are taken. By pre-calculating expected reflectivity values for various deposition heights using simulation models, the invention reduces the time required for actual measurements, as the simulation framework is already in place to rapidly process and interpret the measured data.
Solution Approach 2:
The patent systematically varies the deposition height parameter across multiple measurements to improve optical property determination accuracy. By measuring reflectivity at different deposition heights and using these variations in the simulation model, the invention extracts more accurate optical properties. The simulation software efficiently handles these parameter variations, minimizing the time penalty associated with multiple measurements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise determination of optical properties with high accuracy and efficiency, using established metrology tools within the semiconductor industry, reducing the need for external, costly synchrotron sources and ensuring the materials' composition is optimized for both fabrication and repair processes.
Implementation Method 1
determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system
Data Source
AI summary
The present invention refers to a method for determining at least one optical property of at least one deposition material used for a lithographic mask which comprises the steps: (a) determining a height value of the at least one deposition material deposited on a substrate for each of at least three different deposition heights of the deposition material, wherein the at least three different deposition heights are in a nanoscale range; (b) determining a reflectivity value of the at least one deposition material for each of the at least three different deposition heights, wherein determining the reflectivity values comprises using photons generated by an optical inspection system; and (c) determining the at least one optical property of the at least one deposition material by adapting simulated reflectivity data to the measured reflectivity values for each of the at least three different deposition heights.


