Mask Design Device for 3D Proximity Field Patterning

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Solution Overview

Problem

Conventional 3D nanostructure manufacturing technologies face challenges in process speed and mass productivity due to the need for repetitive laminating processes, and the optimization of proximity field nanopatterning is hindered by difficulties in controlling electric field intensity locally.

Innovation Solution

A mask design device for 3D proximity field patterning based on electric field control is developed, which calculates design parameters for a mask to produce high-resolution 3D nanostructures. The device includes a material selector, an objective function executor, and an optimizer that use a particle swarm optimization algorithm to optimize the mask design.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If 0th order diffraction is suppressed to maximize contrast, then the difference between maximum and minimum values of the interference pattern increases, but the electric field intensity in regions that interfere with formation of the target 3D nanostructure increases, resulting in reduced resolution

Engineering Contradiction:
Improvenanostructure resolutionVSAvoidelectric field intensity in interference regions
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by designing the mask with different structural characteristics in different regions. Specifically, the mask includes a first region with a first structure and a second region with a second structure, where each region is optimized for its specific function. The first region is designed to generate the interference pattern with high contrast, while the second region is designed to control the electric field intensity to prevent unwanted interference effects, thereby achieving both high resolution and controlled electric field distribution simultaneously

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the mask into multiple functional regions: a first region for generating the interference pattern and a second region for controlling electric field intensity. This segmentation allows each region to be independently optimized for its specific purpose, resolving the contradiction between maximizing contrast and controlling harmful electric field intensity in interference regions

Inventive Principle:
Principle #1Segmentation

2Ease of manufacture

If conventional laminating method is used to manufacture 3D nanostructures, then the process can be performed with existing technology, but the process speed and mass productivity are reduced

Engineering Contradiction:
ImprovemanufacturabilityVSAvoidprocess speed and mass productivity
Core Design Contradiction:
Ease of manufactureVSProductivity

Solution Approach 1:

The patent applies preliminary action by pre-designing and pre-fabricating the mask with the specific dual-region structure before the actual nanostructure manufacturing process. The mask is prepared in advance with the optimized first and second regions, allowing the 3D nanostructures to be formed in a single proximity field nanopatterning process rather than requiring multiple laminating steps, thereby significantly improving productivity while maintaining manufacturability

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent merges the functions of multiple manufacturing steps into a single proximity field nanopatterning process. By incorporating both the interference pattern generation and electric field control functions into one mask structure, the process combines what would traditionally require separate laminating operations into a single high-speed process, thereby improving productivity without sacrificing ease of manufacture

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the production of high-resolution 3D nanostructures with improved electric field intensity contrast, leading to enhanced mass productivity and process efficiency in nanostructure manufacturing.

Implementation Method 1

The proximity field nanopatterning diffracts a single light source through a phase mask having a protruding structure, forms an interference fringe through interference between the diffracted lights

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 2

forms an interference fringe through interference between the diffracted lights

Methodology Applied
Scientific EffectInterference: Interference

Implementation Method 3

transfers them to a photoresist to form a 3D nanostructure

Methodology Applied
Scientific EffectPhotopolymerisation: Photopolymerisation

Data Source

PatentUS20250123554A1Mask design device for 3D proximity field patterning based on electric field control, mask for 3D proximity field patterning based on electric field control, method for manufacturing a mask for 3D proximity field patterning based on electric field control and NANO patterning device
Publication Date: 2025.04.17 KOREA UNIV RES & BUSINESS FOUND
  • US20250123554A1 patent drawing
  • US20250123554A1 patent drawing
  • US20250123554A1 patent drawing

AI summary

A mask design device for 3D proximity field pattering based on electric field control is provided. The mask design service, for producing a nanostructure having a constant period, may include: a material selector configured to select a material of the nanostructure having a specific refractive index; an objective function executor configured to execute an objective function based on a 2D electric field intensity map of the nanostructure formed from the material having a specific height and width; and an optimizer configured to set at least one of a period, the refractive index of the nanostructure, and the objective function, as an input variable, and configured to input the input variable into a predetermined algorithm to calculate design parameters of the nanostructure. A mask having the nanostructure, a method for manufacturing the mask, and a nano patterning device are also provided.