Mask Error Measurement Using Composite Image Generation

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Solution Overview

Problem

As semiconductor devices become more highly integrated, there is a growing need for precise measurement of mask errors due to finer mask pattern pitches, which existing technologies struggle to address effectively.

Innovation Solution

The development of a mask error measurement system using a stage for a reference mask and a target mask, a light source, a beam splitter, and an image sensor to generate and measure composite images, allowing for accurate determination of mask pattern errors by focusing both masks' images onto a single image sensor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a single image sensor is used to measure both reference mask and target mask, then device complexity is reduced, but measurement precision deteriorates due to distance differences and image interference

Engineering Contradiction:
Improvenumber of image sensorsVSAvoidmask error measurement precision
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent divides the measurement process into two sequential stages: first capturing the reference mask image, then capturing the target mask image. By segmenting the measurement into separate steps with intermediate processing (clearing previous images, adjusting distances), the system maintains high measurement precision while using a single image sensor, thus reducing device complexity without sacrificing accuracy.

Inventive Principle:
Principle #1Segmentation

2Productivity

If mask pattern pitch is reduced for higher integration, then productivity is improved, but measurement precision deteriorates due to finer pitch requirements

Engineering Contradiction:
Improvesemiconductor device integration densityVSAvoidmask pattern alignment precision
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

The patent performs preliminary alignment by capturing the reference mask image first, storing it as a reference, then using it to guide the subsequent target mask measurement. This preliminary action establishes a baseline that enables precise measurement of fine-pitch patterns, allowing higher integration density to be achieved while maintaining measurement accuracy through the reference-based comparison approach.

Inventive Principle:
Principle #10Preliminary action

3Measurement precision

If distance between masks is reduced for better alignment, then measurement precision is improved, but image interference increases

Engineering Contradiction:
Improvemask pattern alignment precisionVSAvoidimage interference
Core Design Contradiction:
Measurement precisionVSObject-generated harmful factors

Solution Approach 1:

The patent employs periodic action by sequentially capturing images at different time points: first the reference mask, then clearing the display, and finally the target mask. This periodic clearing and recapturing process eliminates image interference between the two masks, allowing precise measurement even when masks are positioned close together, thus resolving the contradiction between measurement precision and image interference.

Inventive Principle:
Principle #19Periodic action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This system enhances measurement accuracy by compensating for distance differences between the masks and reduces interference, improving exposure precision in subsequent processes.

Implementation Method 1

a beam splitter configured to receive the first beam and split the first beam into a second beam and a third beam, the second beam being a portion of the first beam reflected by the reference mask, the third beam being a portion of the first beam reflected by the target mask

Methodology Applied
Scientific EffectReflection: Reflection

Data Source

PatentUS10048601B2Apparatus for measuring mask error and method therefor
Publication Date: 2018.08.14 SAMSUNG ELECTRONICS CO LTD
  • US10048601B2 patent drawing
  • US10048601B2 patent drawing
  • US10048601B2 patent drawing

AI summary

An apparatus for measuring a mask error and a method for measuring a mask error are provided. The apparatus for measuring a mask error includes a stage configured to accommodate a reference mask having a reference pattern, and a target mask adjacent to the reference mask such that a mask pattern of the target mask faces the reference pattern, a light source configured to irradiate the first beam onto the reference mask and the target mask, a light receiving unit including an image sensor, and the image sensor configured to receive a composite image including a first image generated from the reference pattern and a second image generated from the mask pattern, and generate a third image from the first image and the second image, and a measuring unit configured to measure an error of the mask pattern from the third image.