Mask Laser Heating Control for Critical Dimension Uniformity
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Solution Overview
Problem
Existing substrate treating processes face challenges in efficiently correcting the critical dimensions of patterns on masks and ensuring uniformity, leading to over-etching and prolonged processing times due to deviations in etching rates and laser irradiation errors.
Innovation Solution
A substrate treating apparatus and method that includes a support unit, liquid supply unit, heating unit, and error checking unit to correct laser irradiation direction and ensure uniform critical dimensions by measuring and adjusting laser positions and angles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If monitoring pattern and anchor pattern are repeatedly etched to equalize their critical dimensions, then manufacturing precision is improved, but over-etching occurs and processing time increases
Solution Approach 1:
The patent introduces a preliminary critical dimension correction process before the final etching step. This correction process uses a separate etching treatment specifically designed to adjust the critical dimensions of monitoring and anchor patterns to be substantially equal, preventing the need for repeated etching cycles and reducing overall processing time while maintaining precision
Solution Approach 2:
The patent implements a feedback mechanism where the critical dimensions of monitoring patterns and anchor patterns are measured and compared, and this information is used to control the etching treatment parameters. The controller adjusts the etching process based on the measured dimension differences, enabling precise correction without over-etching
2Manufacturing precision
If etching process is precisely controlled to minimize over-etching, then manufacturing precision is improved, but processing time increases
Solution Approach 1:
The patent divides the etching process into two distinct segments: a critical dimension correction etching treatment that specifically targets monitoring and anchor patterns to equalize their dimensions, and a subsequent final etching treatment. This segmentation allows each process to be optimized independently, improving both precision and efficiency
3Speed
If laser irradiation is used to heat substrate patterns, then processing speed is improved, but irradiation position errors cause manufacturing precision degradation
Solution Approach 1:
The patent implements a feedback control system where the actual irradiation position of the laser is detected and compared with the target position, and this information is used to correct irradiation errors. The controller adjusts the laser irradiation based on the detected position deviations, ensuring accurate heating of the substrate patterns while maintaining high processing speed
Solution Approach 2:
The patent replaces mechanical positioning methods with optical detection and control systems. Instead of relying on mechanical precision for laser positioning, the system uses optical detection to identify irradiation position errors and electronically controls the laser irradiation, achieving both high speed and high precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus efficiently treats substrates by correcting laser irradiation errors and ensuring uniform critical dimensions, reducing over-etching and processing time.
Implementation Method 1
a heating unit configured to irradiate a laser to the substrate to which the treating liquid is supplied and to heat any one among the first pattern or the second pattern
Implementation Method 2
When a light is exposed to the semiconductor integrated material on the wafer, for example, a resist on the wafer, chemical properties of the resist change according to a pattern by the light
Data Source
AI summary
The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.