Mask Substrate Laser Irradiation for Positional Deviation Correction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, photolithography and imprint technologies face challenges in correcting high-dimensional positional deviations in mask patterns, as existing methods like lens optical systems and mechanical corrections are insufficient for achieving high-accuracy registration, and laser-induced volume expansion often leads to pattern enlargement rather than precise correction.
Innovation Solution
The development of mask manufacturing equipment that includes a detector for positional deviation, an irradiator to form a heterogeneous layer with laser light, and a calculator to determine optimal irradiation conditions for the peripheral area of the pattern, allowing for precise adjustment of the pattern area by forming a heterogeneous layer that expands in volume, thereby correcting positional deviations without enlarging the pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If laser light is irradiated to form a heterogeneous layer for correcting positional deviation, then high-dimensional positional deviations can be corrected, but the pattern area is enlarged
Solution Approach 1:
The patent applies different irradiation conditions to different regions: the pattern area receives lower irradiation density to prevent enlargement, while the peripheral area receives higher irradiation density to generate sufficient volume expansion for correcting high-dimensional positional deviations. This localized differentiation resolves the contradiction between correction effectiveness and pattern size control.
Solution Approach 2:
The mask substrate is divided into two distinct regions for differential irradiation: the pattern area and the peripheral area. By segmenting the irradiation strategy, the patent enables independent optimization of each region - maintaining pattern size integrity while achieving comprehensive positional deviation correction through peripheral expansion.
2Manufacturing precision
If the pattern area is irradiated to correct positional deviation, then high-dimensional deviations can be corrected, but the entire pattern size cannot be adjusted to desired size
Solution Approach 1:
The patent implements location-specific irradiation strategies where the pattern area receives controlled low-density irradiation for minimal size change, while the peripheral area receives high-density irradiation for substantial volume expansion. This enables independent control of pattern size and positional deviation correction, achieving both precision and adaptability.
3Manufacturing precision
If high-density laser irradiation is applied to correct positional deviation, then correction effectiveness is improved, but pattern enlargement occurs
Solution Approach 1:
The patent applies high irradiation density exclusively to the peripheral area surrounding the pattern, while the pattern area itself receives low irradiation density. This spatial differentiation allows the peripheral region to expand sufficiently for accurate positional deviation correction while the pattern region maintains its original size, resolving the contradiction between correction accuracy and pattern size control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively corrects high-dimensional positional deviations in mask patterns, improving alignment accuracy and manufacturing yield of semiconductor devices by forming a heterogeneous layer that adjusts the pattern position to ideal positions without unnecessary enlargement, thus enhancing the precision and efficiency of the semiconductor device manufacturing process.
Implementation Method 1
an irradiator that irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate
Implementation Method 2
form a heterogeneous layer that is expanded in volume in the mask substrate so that the mask substrate itself is changed in shape
Data Source
AI summary
According to an embodiment, mask manufacturing equipment includes a detector, an irradiator, a calculator, and a controller. The detector detects positional deviation of a pattern formed on a mask substrate. The irradiator irradiates the mask substrate with laser light to form a heterogeneous layer that is expanded in volume in the mask substrate. The calculator calculates an area periphery irradiation condition under which the irradiator is caused to emit laser light to a peripheral area of the pattern on the basis of the positional deviation detected by the detector so that the pattern area is reduced by forming the heterogeneous layer in the peripheral area of the pattern. The controller controls the irradiator to form the heterogeneous layer in the peripheral area of the pattern according to the area periphery irradiation condition.