Patterned Mask Layer Spacer Trimming for Uniformity
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Solution Overview
Problem
The existing photolithography technology limits the size and spacing of patterned structures in semiconductor manufacturing, leading to non-uniformity in patterned mask layers due to tapered spacers, which affects critical dimension and depth uniformity.
Innovation Solution
A method involving the formation of spacers on support features, followed by a patterned protection layer that exposes taper parts, allowing for a trimming process to remove these tapered parts before etching the mask layer, ensuring uniformity through the use of a methane-containing environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If sidewall spacers are formed by etching back process, then pattern transfer is achieved, but tapered parts cause non-uniform mask layer patterning
Solution Approach 1:
The patent applies preliminary action by performing a trimming process on the sidewall spacers before using them as masks for etching the mask layer. This pre-trimming removes the tapered parts in advance, ensuring that the spacers have uniform width throughout their length, which then enables uniform patterning of the mask layer without the defects caused by tapered shapes.
2Length of moving object
If photolithography technology is used, then patterned structures are formed, but size and spacing are limited by exposure resolution
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation process into multiple steps: first forming mandrels with initial patterns, then forming sidewall spacers on the mandrels, trimming the spacers, and finally using them as masks to create the final patterned structures. This multi-stage approach enables achieving smaller feature sizes and tighter spacing that cannot be obtained through single-step photolithography alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the critical dimension and depth uniformity of the patterned mask layer by removing tapered spacer parts, enhancing the uniformity of the patterned structures formed.
Implementation Method 1
the patterned protection layer is formed in a process environment containing methane (CH4)
Data Source
AI summary
A method of forming a patterned mask layer includes the following steps. A plurality of support features is formed on a mask layer. A plurality of spacers is formed on side walls of the support features. A patterned protection layer is formed on the support features and top surfaces of the spacers. At least a part of side surfaces of the spacers are not covered by the patterned protection layer, and the patterned protection layer is formed in a process environment containing methane (CH4). A trimming process is then performed to remove a part of each of the spacers. Tapered parts of the spacers may be removed by the trimming process before the step of etching the mask layer with the spacers as a mask, and the critical dimension uniformity of the patterned mask layer may be improved accordingly.