Semiconductor Mask OPC Position Correction for Deformation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor devices become highly integrated, the optical proximity effect (OPE) causes distortion and dimensional variations during the lithography process, leading to inaccuracies in pattern transfer, which existing optical proximity correction (OPC) methods struggle to fully address, especially due to physical deformation of the lower structure during manufacturing.
Innovation Solution
A method that includes forming a design layout with repetitive and non-repetitive patterns, performing optical proximity correction (OPC) and position correction to align patterns accurately, and manufacturing a mask using the corrected layout to account for physical changes in the lower structure, ensuring precise pattern transfer and alignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) is performed on the design layout, then pattern distortion is reduced, but misalignment due to physical deformation of the lower structure remains uncorrected
Solution Approach 1:
The patent performs position correction in advance to predict and compensate for physical deformation of the lower structure before actual lithography. By calculating expected deformation based on process conditions and pre-adjusting the mask pattern positions, the system eliminates alignment errors that would otherwise occur during manufacturing.
Solution Approach 2:
The patent implements a feedback mechanism where actual deformation data from the lower structure is measured and used to update correction models. This closed-loop approach continuously improves the accuracy of position correction by learning from real manufacturing variations and applying compensatory adjustments to subsequent patterns.
2Productivity
If existing OPC methods are used, then processing time is reduced, but accuracy is insufficient due to inability to account for physical deformation
Solution Approach 1:
The patent divides the correction process into two independent segments: OPC for pattern shape optimization and position correction for alignment compensation. This segmentation allows each process to be optimized separately and executed efficiently, with position correction applied as a distinct transformation step that does not interfere with OPC calculations.
Solution Approach 2:
The patent transforms the correction problem from pattern geometry modification to coordinate system transformation. By changing the reference frame and applying affine transformation parameters to the entire pattern set, the system achieves accurate deformation compensation without requiring complex recalculation of individual pattern geometries.
3Ease of manufacture
If mask patterns are designed without position correction, then manufacturing is simpler, but alignment accuracy deteriorates due to lower structure deformation
Solution Approach 1:
The patent creates a transformed copy of the original design layout that incorporates position correction. This corrected layout serves as a blueprint for mask fabrication, allowing the actual manufacturing process to remain simple while the digital model pre-compensates for expected deformations. The corrected layout is treated as a separate artifact that guides pattern formation without complicating the physical manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the accuracy and efficiency of semiconductor device manufacturing by reducing misalignment and distortion, improving the uniformity and precision of pattern formation on the wafer, thereby addressing the limitations of existing OPC methods.
Implementation Method 1
a distortion phenomenon of a pattern may occur due to diffraction, interference, and the like, of beams. Accordingly, on a wafer, an optical proximity effect (OPE) may occur
Implementation Method 2
forming a second correction layout by performing position correction on the first correction layout to move a position of the corrected second repetitive patterns to correspond to a changed position of the first repetitive patterns according to physical deformation of the lower structure
Data Source
AI summary
A method of manufacturing a semiconductor device includes forming a lower structure including first repetitive patterns, and forming an upper structure including forming second repetitive patterns to correspond to each of the first repetitive patterns on the lower structure, and the forming second repetitive patterns includes preparing a design layout for the second repetitive patterns, forming a first correction layout including corrected second repetitive patterns by performing optical proximity correction (OPC) on the design layout, forming a second correction layout by performing position correction on the first correction layout to move a position of the corrected second repetitive patterns to correspond to a changed position of the first repetitive patterns according to physical deformation of the lower structure, manufacturing a mask using the second correction layout, and patterning a photoresist layer using the mask.