Mask Assembly Partial Etching Extension for Thin Film Deposition
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Solution Overview
Problem
Existing mask assemblies for thin film deposition face challenges in forming precise deposition patterns due to issues with adhesion and shadowing, leading to potential pattern defects during the thin film deposition process, especially in organic light emitting display apparatuses.
Innovation Solution
A mask assembly with a partially etched area and a partial etching extension portion is designed, featuring deposition pattern portions and ribs, where the partial etching extension portion extends from the outer area to the edge of the partially etched area without passing through the mask, ensuring complete contact of the photosensitive layer and preventing etching solution penetration, thus enhancing pattern precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional mask assembly is used for thin film deposition, then the deposition process can be performed, but pattern defects occur due to adhesion issues and shadowing effects
Solution Approach 1:
The mask assembly performs preliminary actions by forming a partial etching extension portion that protrudes from the rear surface of the mask body before the deposition process begins. This extension portion pre-establishes a barrier structure that prevents etching solution penetration and ensures complete photosensitive layer contact, thereby preventing pattern defects before they can occur during deposition
Solution Approach 2:
The partial etching extension portion acts as an intermediary element between the mask body and the deposition environment. It mediates the interaction by providing an additional protective barrier that prevents harmful etching solution penetration while ensuring proper photosensitive layer adhesion, thus resolving the contradiction between precision and reliability
2Ease of manufacture
If the mask structure is simplified, then manufacturing is easier, but adhesion and shadowing issues cause pattern defects
Solution Approach 1:
The mask assembly is segmented into distinct functional portions: a mask body for structural support and a partial etching extension portion for protective functionality. This segmentation allows each part to be optimized independently - the mask body can be manufactured using conventional simple processes while the extension portion provides the necessary precision enhancement to prevent pattern defects
3Productivity
If the photosensitive layer does not contact the mask completely, then deposition can proceed faster, but pattern defects occur due to adhesion issues
Solution Approach 1:
The partial etching extension portion performs a preliminary protective action by protruding from the rear surface to ensure complete photosensitive layer contact is maintained throughout the deposition process. This pre-established contact assurance prevents adhesion issues and pattern defects while allowing the deposition to proceed at optimal speed without compromising pattern uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents pattern defects by ensuring complete contact of the photosensitive layer and preventing etching solution penetration, resulting in a mask with uniform thickness and precise deposition patterns, improving the overall thin film deposition process.
Implementation Method 1
a mask having a partially etched area, the plurality of deposition pattern portions being within the partially etched area
Implementation Method 2
forming a partially etched area in the mask; forming a plurality of deposition pattern portions in the partially etched area
Data Source
AI summary
A mask assembly for thin film deposition, the mask assembly, including a mask frame having an opening; a mask coupled to the mask frame and having a first surface facing a substrate and a second surface opposite to the first surface, a plurality of deposition pattern portions, and a rib between the adjacent deposition pattern portions, the mask having a partially etched area, the plurality of deposition pattern portions being within the partially etched area; and a partial etching extension portion in an outer portion of an area corresponding to the plurality of deposition pattern portions.