Mask Patterns with Intentional Breaks for Lithography
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Solution Overview
Problem
Current lithographic techniques face challenges in determining suitable mask patterns for photolithography and write patterns in semiconductor manufacturing, particularly as feature density increases, leading to distortions and artifacts due to the wave nature of light, despite the use of Optical Proximity Correction (OPC) and Resolution Enhancement Technologies (RET).
Innovation Solution
A method for determining mask patterns and write patterns that include distinct regions with specific optical properties, using a target pattern with continuous features and separate features separated by spacing, which overlap or are associated with intersections, and employing optical proximity correction and gradient calculations based on a model of the photolithographic process to optimize pattern printing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional photolithography mask patterns are used to increase feature density, then manufacturing productivity improves, but manufacturing precision deteriorates due to wave nature of light causing distortions and artifacts
Solution Approach 1:
The patent applies segmentation by dividing continuous mask pattern features into multiple discrete segments separated by intentional breaks. This segmentation allows each segment to be independently optimized and printed more accurately, while the breaks prevent optical interference that causes distortions. The segmented features are then recombined during the lithography process to form the desired continuous pattern on the wafer, thereby maintaining both high feature density and manufacturing precision.
2Manufacturing precision
If Optical Proximity Correction and Resolution Enhancement Technologies are applied to improve manufacturing precision, then pattern accuracy improves, but device complexity increases
Solution Approach 1:
The patent applies inversion by reversing the conventional approach: instead of trying to print continuous features directly and correcting distortions afterward, it intentionally introduces breaks in the mask pattern features. This inversion transforms the problem from correcting optical interference effects to preventing them at the source, thereby achieving accurate pattern printing with simpler processing steps and reduced device complexity.
3Manufacturing precision
If mask patterns with intentional breaks are used to improve manufacturing precision, then pattern accuracy improves, but ease of manufacture deteriorates
Solution Approach 1:
The patent applies preliminary action by pre-calculating and pre-positioning the intentional breaks in the mask pattern during the mask design phase. The break locations, lengths, and spacing are determined in advance based on the desired wafer pattern and optical properties. This preliminary planning simplifies the actual mask fabrication process, as the breaks are intentionally designed features rather than defects to be corrected, thereby improving ease of manufacture while maintaining high pattern accuracy.
Data Source
AI summary
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.