Mask Pattern Correction via Corner Cutting and OPC
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Solution Overview
Problem
In semiconductor and MEMS technology, the precision of optical lithography is hindered by the optical proximity effect (OPE), causing gaps in mask patterns to be too small for manufacturing requirements, which obstructs the reduction of critical element dimensions.
Innovation Solution
A method involving cutting original patterns before applying the optical proximity correction (OPC) process to form mask patterns with larger gaps, ensuring manufacturability, by modifying contours and applying specific cutting directions to maintain structural integrity during the OPC process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If optical proximity correction (OPC) is applied to eliminate optical proximity effect, then pattern precision is improved, but gap size becomes too small for manufacturing requirements
Solution Approach 1:
The patent applies preliminary action by cutting corners of the original pattern before applying OPC. This pre-modification ensures that when OPC is subsequently applied, the resulting gaps remain large enough for manufacturing while still achieving the desired pattern precision. The corner cutting is performed in advance to prevent the formation of unmanufacturable small gaps.
Solution Approach 2:
The patent segments the pattern modification process into two distinct steps: first cutting the corners of the original pattern, then applying OPC to the cut pattern. This segmentation allows each step to be optimized independently - the corner cutting ensures manufacturable gap sizes, while the subsequent OPC maintains pattern precision.
2Measurement precision
If mask pattern is corrected to reduce optical proximity effect, then pattern accuracy is improved, but manufacturing requirement is violated
Solution Approach 1:
The patent performs preliminary corner cutting before OPC to ensure that the subsequent pattern correction does not create gaps smaller than what can be manufactured. This pre-action preserves manufacturability while allowing accurate pattern correction to be applied afterward.
Solution Approach 2:
The patent divides the correction process into two stages: initial corner cutting to establish manufacturable geometry, followed by OPC to achieve high accuracy. This segmentation ensures both manufacturing feasibility and pattern accuracy are satisfied.
Data Source
AI summary
A mask pattern and a correcting method thereof are provided. The correcting method includes the following steps. An original pattern having a first original contour and a second original contour is provided. The first original contour has a first original corner. The second original contour has a second original corner, which is near the first original corner. The first and second original corners are cut to form a cut pattern. An optical proximity correction (OPC) process is applied to the cut pattern to form the mask pattern.