Exposure Mask Pattern Dimension Correction via Grid Density Analysis
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for correcting global CD errors in semiconductor manufacturing, such as those caused by flare and loading effects, are inaccurate due to their reliance on approximated corrections that do not account for changes in pattern density, leading to difficulties in achieving high precision and integration in semiconductor devices.
Innovation Solution
A method involving the calculation of correction amounts using the area, total length of sides, and apex contributions within mesh-like grid regions on an exposure mask, allowing for precise dimension correction by adjusting pattern dimensions based on these factors and considering the influence of peripheral patterns, thereby improving accuracy across multiple manufacturing steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If approximated correction methods are used for global CD errors, then manufacturing complexity is reduced, but manufacturing precision deteriorates
Solution Approach 1:
The exposure mask surface is divided into multiple grid regions, and correction amounts are calculated independently for each grid region based on local pattern density. This segmentation allows precise correction of global CD errors while maintaining manageable computational complexity through localized processing.
Solution Approach 2:
Different correction amounts are applied to different grid regions based on their specific pattern density characteristics. The correction method adapts to local conditions by calculating density-specific correction values, thereby achieving high manufacturing precision without requiring overly complex global correction algorithms.
2Manufacturing precision
If correction amounts are calculated based on pattern density, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
Pattern density is calculated and correction amounts are determined in advance during the mask preparation stage, before the actual exposure process. This preliminary calculation of correction values based on pattern density simplifies the overall process by pre-computing the complexity-intensive steps, thereby improving manufacturing precision without significantly increasing operational device complexity.
Data Source
AI summary
A method for manufacturing a semiconductor device includes calculating a correction amount for correcting a dimension error generated in a pattern, by using an area and a total length of sides of a perimeter of the pattern included in each grid region of a plurality of mesh-like grid regions made by virtually dividing a pattern creation region of an exposure mask, exposing the pattern whose dimension has been corrected by the correction amount onto a substrate on which a resist film is coated, developing the resist film after the exposing, and processing the substrate by using a resist pattern after the developing.