Mask Pattern Correction via Non-Uniform Stress Mesh
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Solution Overview
Problem
During semiconductor device manufacturing, circuit pattern displacement occurs due to stress from heat processing and material lamination, leading to inaccuracies in pattern formation across layers, which existing correction methods fail to address effectively.
Innovation Solution
A mask pattern correction system that includes stress analysis circuitry to measure displacement, correction value calculation circuitry to determine displacement correction values, and correction map generation circuitry to create a non-uniform mesh correction map, allowing for precise displacement correction of mask patterns to align circuit elements and interconnects across layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a uniform mesh correction map is used for displacement correction, then the correction process is simple, but the accuracy of displacement correction is insufficient and processing time is long
Solution Approach 1:
The correction map is divided into multiple regions based on stress distribution characteristics, with each region having its own displacement correction values. This segmentation allows for more accurate local correction while managing complexity through regional division.
Solution Approach 2:
Different regions of the correction map are assigned different mesh densities and correction parameters based on local stress characteristics. High-stress areas use finer mesh for higher accuracy, while low-stress areas use coarser mesh, optimizing both accuracy and processing efficiency.
2Measurement precision
If multiple measurement data points are collected for stress analysis, then the displacement measurement accuracy is improved, but the processing time and data complexity increase
Solution Approach 1:
The measurement area is divided into multiple regions, and measurement points are strategically distributed across these regions. This segmentation allows for accurate stress characterization with fewer total measurement points by focusing data collection on critical areas.
Solution Approach 2:
Instead of uniformly distributing measurement points across the entire substrate, the method uses a sufficient number of points in critical high-stress regions while using fewer points in low-stress regions, achieving accurate displacement correction without excessive measurement overhead.
Data Source
AI summary
According to one embodiment, a mask pattern correction system includes the following configuration. A stress analysis circuitry divides a layout of a circuit pattern formed using a design mask formed in accordance with mask design data into correction regions, and acquires a displacement amount from the regions. A correction value calculation circuitry calculates a displacement correction value from the displacement amount. A correction map generation circuitry generates a correction map based on a correction value difference of the displacement correction values. A mask position correction circuitry allocates the regions to a layout of the circuit pattern, performs displacement correction of a mask pattern on the design mask by the displacement correction values, and creates a correction mask based on the displacement correction.