Mask Pattern Data Generation Using Position Correction Tables
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Solution Overview
Problem
In semiconductor manufacturing, the use of extreme ultraviolet (EUV) light for lithography poses challenges due to the need for reflective masks and optical systems, leading to pattern image shifts and contrast variations when EUV light is obliquely incident on the mask, making it difficult to accurately transfer patterns onto wafers.
Innovation Solution
A method is developed to generate data for mask patterns using a position correction amount table, which corrects transfer position errors based on pattern size and pitch, allowing for precise alignment and correction of image shifts during the lithography process, utilizing a reflective exposure mask and EUV light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a reflective mask is used for EUV lithography, then the pattern width and pitch can be reduced below conventional limits, but the transferred image position shifts and contrast varies depending on the incident angle and pattern orientation
Solution Approach 1:
The patent applies preliminary action by pre-calculating and storing position correction amounts for various pattern sizes and pitches in a correction amount table before actual mask fabrication. This allows the mask pattern data to be generated with built-in correction values, enabling automatic compensation for image shift during exposure without requiring real-time adjustments or additional hardware components.
Solution Approach 2:
The patent utilizes parameter changes by systematically varying pattern size and pitch parameters to establish correction amount relationships. By creating a comprehensive correction amount table that maps different pattern parameters to their corresponding position corrections, the system adapts to various pattern configurations while maintaining consistent transfer accuracy despite oblique incidence effects.
2Manufacturing precision
If uniform offsetting of the entire mask pattern is applied to correct image shift, then some position errors are reduced, but it is difficult to appropriately correct the shift phenomenon for the entire mask pattern with varying sizes and pitches
Solution Approach 1:
The patent implements local quality by providing differentiated position correction amounts for different pattern sizes and pitches through the correction amount table. Each pattern type receives a tailored correction value based on its specific characteristics, rather than applying a uniform correction to all patterns. This ensures optimal correction effectiveness for each local pattern configuration while maintaining system-wide consistency.
Solution Approach 2:
The patent applies segmentation by dividing the mask pattern correction into discrete categories based on pattern size and pitch. The correction amount table segments corrections into specific entries for different pattern types, allowing independent optimization of correction values for each segment. This segmented approach enables precise correction for diverse pattern configurations without compromising overall mask performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively corrects image shifts and ensures accurate pattern transfer onto wafers, enabling the formation of desired device patterns with improved precision and fidelity, even with oblique incidence of EUV light.
Implementation Method 1
exposure using EUV light requires a reflective exposure mask and a reflective optical system instead of a light transmissive exposure mask and a light transmissive optical system
Data Source
AI summary
A method for generating data on mask pattern used to form a device pattern formed on a reflective exposure mask, wherein data on the mask pattern is generated based on a position correction amount table used to correct an amount of transfer position error occurring depending on at least one of pattern size and pattern pitch of the mask pattern when the mask pattern is transferred onto an exposure target member.