Mask Pattern Correction for Curved Etch Contours
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Solution Overview
Problem
Existing methods for etching bias correction in semiconductor chip manufacturing are inadequate for patterns with curved contours, as they fail to accurately account for varying etching biases at different positions on the curve, leading to inaccuracies in mask pattern design.
Innovation Solution
A method involving the acquisition of sampling points on a curved contour, performing optical proximity effect correction and photolithography simulation to determine etching biases, followed by iterative etching bias corrections until a preset condition is met, using simulation models to refine the mask pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional etching bias correction methods are used for curved contours, then the manufacturing process is simple, but the manufacturing precision is poor due to inability to account for varying etching biases at different positions
Solution Approach 1:
The curved contour is divided into multiple discrete sampling points along its length. Each sampling point is independently analyzed to determine its specific etching bias through simulation, rather than applying a uniform correction to the entire curve. This segmentation enables precise, position-specific bias correction while maintaining manageable computational complexity.
Solution Approach 2:
Different etching bias corrections are applied to different locations along the curved contour based on local characteristics. The method determines etching bias individually for each sampling point and its corresponding edge portion, allowing the correction to adapt to local variations in the curve geometry and etching conditions, thereby achieving high manufacturing precision.
2Manufacturing precision
If individual etching bias determination is performed for each sampling point through simulation, then the manufacturing precision improves, but the productivity decreases due to increased computational time
Solution Approach 1:
The method performs preliminary photolithography simulation and etching simulation to establish the relationship between mask patterns and resulting etch patterns before final mask design. By pre-determining etching biases through simulation for various sampling points, the method enables accurate correction without requiring iterative trial-and-error during actual mask manufacturing, thus improving both precision and efficiency.
Solution Approach 2:
The method uses simulated etch patterns as virtual copies of the actual etching process outcomes. These simulated patterns allow for rapid evaluation and comparison of different mask design options without requiring physical fabrication iterations. The simulation-based copying approach accelerates the design process while maintaining high precision in bias correction.
Data Source
AI summary
The present application discloses a mask pattern determination method, apparatus, medium, and program product, which are applied to the technical field of semiconductor. In the mask pattern determination method provided in the present application, a target mask pattern is determined based on a plurality of second sampling points, and the second sampling points are obtained by performing etching bias correction on a first sampling point based on a first etching deviating data between a position corresponding to a first sampling point on the first photolithography pattern and a position corresponding to the first sampling point on the first etch pattern. The first sampling point may represent a pattern contour of the first target etch pattern. Therefore, in the present application, an etching bias of a curved contour may be corrected relatively accurately by correcting the plurality of sampling points individually.