Semiconductor Mask Pattern Correction Using Symmetrical OPC Templates
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Solution Overview
Problem
The optical proximity effect (OPE) in photolithography leads to significant deviations in semiconductor mask patterns as feature sizes shrink, necessitating repeated adjustments and measurements, which are time-consuming and costly, limiting the efficiency of the lithography process.
Innovation Solution
Divide the semiconductor mask pattern into symmetrical sub-blocks, perform optical proximity correction (OPC) on one sub-block to generate a modified template, and create copy templates to replace the original pattern, reducing the need for multiple OPC steps and associated costs and time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If repeated OPC adjustments and measurements are performed to correct optical proximity effect, then manufacturing precision is improved, but productivity deteriorates due to time-consuming processes
Solution Approach 1:
The patent divides the mask pattern into multiple sub-regions and performs OPC independently on each sub-region. This segmentation allows parallel processing of different pattern areas, reducing the total correction time while maintaining comprehensive coverage of the entire mask pattern, thus resolving the contradiction between precision and productivity
Solution Approach 2:
The patent performs preliminary OPC adjustments on mask patterns before actual lithography production. By pre-correcting the patterns and establishing correction rules in advance, the need for repeated adjustments during production is eliminated, improving both precision and productivity
2Manufacturing precision
If repeated OPC adjustments and measurements are performed to correct optical proximity effect, then manufacturing precision is improved, but loss of time increases due to multiple adjustment cycles
Solution Approach 1:
By segmenting the mask pattern into sub-regions and correcting them independently, the patent reduces the overall correction time. Each sub-region can be processed in parallel, significantly decreasing the total time required compared to sequential correction of the entire pattern, while still achieving high precision
Solution Approach 2:
The patent implements preliminary OPC corrections before mass production. By performing adjustments and measurements in the design phase rather than during production, the time loss is confined to the preliminary stage, allowing rapid production thereafter without repeated correction cycles
3Manufacturing precision
If repeated OPC adjustments and measurements are performed to correct optical proximity effect, then manufacturing precision is improved, but device complexity increases due to multiple adjustment steps
Solution Approach 1:
The patent simplifies the complex OPC process by dividing it into independent sub-region corrections. Each sub-region can be processed with standardized procedures, reducing the overall process complexity compared to attempting to correct the entire mask pattern as a single complex unit, while maintaining high precision through comprehensive coverage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the processing costs and time required for OPC, enhancing the efficiency of the lithography process by allowing a single OPC step to correct the entire pattern, thereby improving manufacturing yield and reducing equipment calibration needs.
Implementation Method 1
since light may be diffracted when passing through the recticle mask, and the light passing different positions of the recticle mask may further interfere
Implementation Method 2
the light passing different positions of the recticle mask may further interfere, thus the actual intensity distribution of the light projected on the photoresist layer is the result of the superposition of the diffracted light
Data Source
AI summary
A method for correcting a semiconductor mask pattern includes steps as follows: A pattern to be corrected in the semiconductor mask pattern is divided into a plurality of sub-blocks that are symmetrical to and coincide with each other. Then, an optical proximity correction (OPC) step is performed on one of the plurality of sub-blocks to obtain a modified template. At least one copy template is generated according to the modified template corresponding to the other ones of the plurality of sub-blocks. The modified template and the at least one copy template are spliced to form a correcting pattern to replace the original pattern to be corrected.