Exposure Mask Pattern Position Correction via Flatness Variation Data
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Solution Overview
Problem
In semiconductor manufacturing, the precision of pattern position on photo masks is compromised due to deformation when chucked in exposure apparatuses, leading to position deviations that are critical at the 5 nm or less scale required by modern design rules.
Innovation Solution
Generating and using flatness variation data to create position correction data for drawing patterns on mask blanks substrates, ensuring the mask pattern aligns correctly even when the mask is chucked, by adjusting the drawing position based on predicted flatness changes caused by the chucking mechanism.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Shape
If a photo mask is chucked in the exposure apparatus using a vacuum chucking mechanism, then the mask flatness is improved, but the mask pattern position deviates due to deformation
Solution Approach 1:
The patent measures the flatness of the mask blanks substrate before chucking and generates correction data in advance. This preliminary measurement and correction data generation allows the system to compensate for deformation that will occur during chucking, thereby resolving the contradiction between improving flatness and maintaining pattern position precision
Solution Approach 2:
The patent implements a feedback mechanism where the measured flatness data from before chucking is used to generate correction data, which is then applied to adjust the drawing position. This closed-loop feedback system enables real-time compensation for deformation, simultaneously achieving improved flatness and maintained pattern position precision
2Ease of manufacture
If the mask pattern is drawn on the mask blanks substrate in a state of native flatness, then the drawing process is simple, but the pattern position deviates after chucking due to deformation
Solution Approach 1:
The patent performs preliminary measurement of the mask blanks substrate flatness before the drawing process and generates correction data in advance. This allows the drawing apparatus to compensate for future deformation during chucking, maintaining pattern position precision without significantly complicating the drawing process
Solution Approach 2:
The patent introduces correction data as an intermediary element between the drawing process and the final pattern position. This correction data acts as a mediator that compensates for deformation effects, allowing the drawing process to remain simple while achieving high pattern position precision after chucking
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces alignment errors from 20 nm to 12 nm, improving manufacturing yield and enabling more precise semiconductor device production at lower costs and shorter times.
Implementation Method 1
a chuck unit for chucking a mask blanks substrate to be processed into an exposure mask; generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus
Data Source
AI summary
A method of manufacturing an exposure mask includes generating or preparing flatness variation data relating to a mask blanks substrate to be processed into an exposure mask, the flatness variation data being data relating to change of flatness of the mask blank substrate caused when the mask blank substrate is chucked by a chuck unit of an exposure apparatus, generating position correction, data of a pattern to be drawn on the mask blanks substrate based on the flatness variation data such that a mask pattern of the exposure mask comes to a predetermined position in a state that the exposure mask is chucked by the chuck unit, and drawing a pattern on the mask blanks substrate, the drawing the pattern including drawing the pattern with correcting a drawing position of the pattern and inputting drawing data corresponding to the pattern and the position correction data into a drawing apparatus.