Semiconductor Mask Pattern Resolution via Sacrificial Etching
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Solution Overview
Problem
The limitations of optical resolution in exposure apparatuses hinder the formation of fine patterns in semiconductor devices, restricting the integration and miniaturization of semiconductor devices.
Innovation Solution
A method involving the formation of sacrificial patterns, remaining mask patterns, and subsequent etching processes to create mask patterns with specific shapes and spacings, allowing for the enhancement of pattern resolution without relying solely on the exposure apparatus's capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional exposure apparatus is used to form patterns, then the process is simple and direct, but the pattern resolution is limited by optical resolution
Solution Approach 1:
The pattern formation process is divided into multiple stages: forming sacrificial patterns first, then forming remaining mask patterns between them, followed by selective removal of sacrificial patterns and etching of horizontal portions. This segmentation allows achieving fine pattern resolution (5-6 times improvement) that cannot be obtained through single-step exposure, while managing complexity through systematic multi-step processing
Solution Approach 2:
Sacrificial patterns are formed in advance before the final mask patterns. These preliminary sacrificial structures serve as placeholders that define the spacing and positioning for subsequent mask formation, enabling precise pattern resolution to be achieved through preparatory structuring rather than relying solely on exposure apparatus capabilities
2Manufacturing precision
If pattern size is decreased to achieve higher integration, then device integration increases, but optical resolution limitations prevent formation of fine patterns
Solution Approach 1:
Sacrificial patterns act as intermediary structures that enable the formation of finer mask patterns. By introducing these intermediate sacrificial elements, the process overcomes the optical resolution barrier, allowing reliable formation of sub-resolution patterns through mechanical/chemical structuring rather than direct optical patterning
Solution Approach 2:
The solution moves from two-dimensional planar patterning to three-dimensional structuring with vertical portions and horizontal portions of mask patterns. By utilizing vertical dimensions and multi-layer structures, the process achieves fine horizontal pattern resolution through vertical etching and selective removal, bypassing optical resolution limits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the resolution of pattern formation by five to six times, enabling more integrated and miniaturized semiconductor devices beyond the optical limitations of traditional exposure apparatuses.
Implementation Method 1
forming first mask patterns by anisotropically etching the first remaining mask patterns
Data Source
AI summary
A method of forming a semiconductor device includes forming first sacrificial patterns on a lower structure, forming first remaining mask layers having a “U” shape between the first sacrificial patterns to be in contact with the first sacrificial patterns, forming first remaining mask patterns by pattering the first remaining mask layers, each of the first remaining mask patterns including a horizontal portion, parallel to an upper surface of the lower structure, and a vertical portion, perpendicular to the upper surface of the lower structure, forming second mask patterns spaced apart from the vertical portions of the first remaining mask patterns, removing the first sacrificial patterns remaining after forming the second mask patterns, and forming first mask patterns by etching the horizontal portions of the first remaining mask patterns.