Semiconductor Mask Pattern Stabilization for Wet Cleaning Adhesion
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Solution Overview
Problem
During semiconductor manufacturing, small-sized mask patterns experience insufficient adhesion due to physical erosion and centrifugal forces during wet cleaning, leading to distortion or peeling, resulting in failed pattern transfer and reduced yield.
Innovation Solution
A method involving the formation of a stabilizing layer with linear structures and grooves, followed by a hard mask layer covering the structure, where the mask pattern is connected to the top of the linear structures and inner walls of the grooves, enhancing the contact area and adhesion force, thereby preventing distortion and peeling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wet cleaning is performed to remove remained hard mask, then cleaning effectiveness is improved, but mask pattern adhesion deteriorates due to physical erosion and centrifugal force
Solution Approach 1:
A stabilizing layer is formed on the substrate before forming the mask pattern. This preliminary structure provides mechanical support and enhances adhesion of the mask pattern during subsequent wet cleaning processes, preventing distortion and peeling while allowing effective removal of remained hard mask material.
Solution Approach 2:
The stabilizing layer acts as an intermediary between the substrate and the mask pattern. It mediates the mechanical stresses during wet cleaning, distributing centrifugal forces and physical erosion effects, thereby protecting the mask pattern adhesion while still permitting thorough cleaning of the hard mask material.
2Productivity
If mask pattern size is reduced to increase integration density, then productivity is improved, but manufacturing precision deteriorates due to insufficient adhesion and pattern distortion
Solution Approach 1:
The stabilizing layer is prepared in advance on the substrate before depositing the mask pattern. This preliminary structure provides enhanced mechanical support that is particularly critical for small-sized mask patterns, ensuring they maintain their shape and position during manufacturing processes despite reduced dimensions.
Solution Approach 2:
The stabilizing layer provides localized mechanical support specifically at the interface between the substrate and the mask pattern. This localized reinforcement is particularly beneficial for small-sized patterns where adhesion issues are most critical, without affecting the overall miniaturization and integration density of the device.
Data Source
AI summary
The present application provides a method for manufacturing a semiconductor structure, a semiconductor structure, and a memory. The method for manufacturing a semiconductor structure includes the following steps: providing a substrate, and forming a stabilizing layer on the substrate; forming a stabilizing structure consisting of a plurality of linear structures and grooves among the linear structures; forming a hard mask layer covering the stabilizing structure; forming a mask pattern connected to a top of the linear structure and an inner wall of the groove on the hard mask layer; and transferring the mask pattern to the substrate.