Mask Pattern Width Correction via Temperature-Controlled ALD
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Solution Overview
Problem
In semiconductor manufacturing, the critical dimension of patterns formed on target layers is challenging to control due to the resolution limits of resist masks, especially with increasing device integration, leading to variations in pattern dimensions that affect the precision of micro-pattern formation.
Innovation Solution
A method involving the adjustment of mask pattern widths by measuring and calculating positive difference values, followed by the precise deposition of films using atomic layer deposition techniques within a plasma processing device, where the temperature of the target layer is controlled to achieve uniform film thickness and minimize pattern variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If photolithography technology is used to form a resist mask, then the mask formation process is simple and efficient, but the critical dimension of the pattern is limited by the resolution limit of the photolithography technology
Solution Approach 1:
The patent performs preliminary measurement of the mask pattern width before etching, calculates the difference from the target width, and forms a compensation film in advance to adjust the width. This preliminary action allows the use of simple photolithography while achieving higher precision through subsequent width adjustment.
Solution Approach 2:
The patent changes physical parameters (temperature distribution across the wafer surface) to control film deposition thickness. By creating temperature differences, the film thickness varies spatially to compensate for mask pattern width variations, achieving precise critical dimension control.
2Manufacturing precision
If a silicon oxide film is deposited on the resist mask to adjust dimensions, then the pattern width can be reduced below the resolution limit, but the film deposition process becomes complex and time-consuming
Solution Approach 1:
Instead of using complex multi-step deposition processes, the patent controls the temperature parameter during film deposition to achieve the desired film thickness. By adjusting temperature distribution, a single deposition process can achieve variable thickness across the wafer, simplifying the overall process while maintaining precision.
Solution Approach 2:
The patent performs preliminary measurement and calculation of the required compensation amount before deposition. This allows the deposition process to be optimized and controlled to achieve the exact needed film thickness, reducing unnecessary process steps and time.
3Manufacturing precision
If the film deposition time is extended to achieve uniform film thickness, then the film thickness uniformity improves, but the processing time increases
Solution Approach 1:
The patent changes the temperature parameter during deposition to achieve uniform film thickness in a shorter time. By optimizing temperature conditions, the deposition rate and film quality are simultaneously improved, reducing processing time while maintaining uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses variations in critical dimensions, enabling the formation of precise patterns beyond the resolution limits of traditional resist masks, ensuring high integration and miniaturization in semiconductor devices.
Implementation Method 1
an eighth step of generating plasma of second gas within the processing container after the seventh step
Implementation Method 2
forming a film having a thickness of the positive difference value... by using atomic layer deposition techniques within a plasma processing device
Data Source
AI summary
In a method according to an embodiment, before etching a target layer of a wafer, a main surface of the target layer is divided into a plurality of areas. A difference value between a groove width of a mask and a reference value of the groove width is calculated for each of the plurality of areas, a temperature of the target layer is adjusted by using correspondence data indicating correspondence between a temperature of the target layer and a film thickness of a formed film. Then, a film is formed on the mask for each atom layer, and a film having a film thickness corresponding to the difference value is formed on the mask to correct the groove width in each of the plurality of areas to the reference value.