Lithography Mask Repair Deposition With Inversion Molecule Gas
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Solution Overview
Problem
Existing methods for producing deposition materials in lithography masks are complex, time-consuming, and expensive, and the repair materials are not always optimal in terms of strength, durability, and stability under physical and chemical stresses.
Innovation Solution
A method involving the use of inversion molecules in a second gas, with controlled gas flow rates and concentrations, to produce deposition materials with improved stability and durability, using a particle beam-induced deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If particle beam-induced deposition process is used to repair mask errors, then mask errors can be remedied, but the repair material does not have optimal strength, durability and stability under physical and chemical stresses
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by introducing a second gas containing inversion molecules (such as ammonia or hydrogen sulfide) in addition to the first deposition gas. This modifies the chemical composition and molecular behavior during deposition, leading to repair material with enhanced stability and durability while maintaining process feasibility
Solution Approach 2:
The patent creates a composite gas environment by combining two different gases with distinct properties - the first deposition gas and the second gas with inversion molecules. This composite approach allows the repair material to incorporate beneficial properties from both gas components, improving overall material performance under stress
2Productivity
If gas flow rate is increased to maintain gas concentration during deposition, then deposition material production is enhanced, but gas depletion effects become more significant
Solution Approach 1:
The patent introduces a second gas with inversion molecules that have unique quantum mechanical properties. The inversion oscillation frequency and molecular behavior differ from conventional gases, changing how the gas interacts with the particle beam and substrate. This allows maintaining adequate gas concentration without the same depletion effects as the first gas
Solution Approach 2:
The second gas acts as an intermediary substance that mediates between the particle beam and the first deposition gas. The inversion molecules in the second gas create a different interaction pathway that reduces direct depletion of the first gas, allowing sustained deposition material production
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method optimizes the production of deposition materials by minimizing gas depletion and enhancing the stability of the repair materials, allowing them to withstand multiple cleaning cycles and maintain desired properties under various lithography processes.
Implementation Method 1
providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas
Implementation Method 2
the second gas including second molecules capable of performing an inversion oscillation
Data Source
AI summary
The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.