Mask Repair for Iridium Removal Using Particle Beam Etching

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Solution Overview

Problem

Existing methods for processing lithography masks are inadequate for materials resistant to chemical and physical stress, particularly those containing iridium, which are needed for advanced lithography applications.

Innovation Solution

A method involving a gas comprising first molecules and a particle beam is used to remove iridium-containing materials on lithography objects, utilizing a halogen-containing gas and particle beam-induced etching to overcome the resistance of these materials to removal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If iridium-containing materials are used for mask structures, then chemical stability and resistance to lithography stress are improved, but difficulty of removal increases

Engineering Contradiction:

Improvechemical stabilityVSAvoiddifficulty of removal

Core Design Contradiction:

ReliabilityVSEase of repair

Solution Approach 1:

The patent changes the removal mechanism from chemical etching to physical sputtering by using a gallium ion beam. This parameter change in the removal method allows effective removal of iridium-containing materials that are resistant to chemical etching, while maintaining the chemical stability of the material during normal lithography operations.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces chemical removal methods with a physical particle beam approach. The gallium ion beam physically sputters the iridium material through mechanical impact, substituting the chemical etching process that cannot effectively remove iridium-based materials.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Ease of operation

If conventional cleaning methods are used, then ease of operation is maintained, but effectiveness on resistant materials deteriorates

Engineering Contradiction:

Improveease of cleaningVSAvoidcleaning effectiveness

Core Design Contradiction:

Ease of operationVSReliability

Solution Approach 1:

The patent replaces conventional chemical cleaning methods with a physical particle beam cleaning process. The gallium ion beam physically removes resistant materials through sputtering, making the cleaning process effective against iridium-containing materials that conventional chemical methods cannot remove.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the cleaning mechanism from chemical reactions to physical particle impact. By using a gallium ion beam instead of chemical cleaners, the system achieves effective removal of resistant materials while maintaining operational simplicity through automated beam control.

Inventive Principle:

Principle #35Parameter changes

3Productivity

If particle beam parameters are increased to improve removal rate, then productivity increases, but damage to mask structures worsens

Engineering Contradiction:

Improveremoval rateVSAvoiddamage to mask structures

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent optimizes the gallium ion beam parameters (current, voltage, exposure time) to achieve effective removal of iridium-containing materials at controlled rates. By carefully adjusting these parameters, the process removes material efficiently while minimizing damage to surrounding mask structures.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent applies localized beam control to target only the specific areas requiring material removal. The particle beam is focused on defect regions rather than the entire mask, ensuring high removal rates at defect sites while protecting the rest of the mask structure from unnecessary exposure and potential damage.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively removes iridium-containing materials without residue, ensuring high stability and resistance to chemical and physical stress, allowing for reliable lithography processes even under extreme conditions.

Implementation Method 1

utilizing a halogen-containing gas and particle beam-induced etching to overcome the resistance of these materials to removal

Methodology Applied

Scientific EffectParticle beam-induced etching:

Implementation Method 2

A method involving a gas comprising first molecules and a particle beam is used to remove iridium-containing materials on lithography objects

Methodology Applied

Scientific EffectSputtering: Sputtering

Data Source

PatentUS20260044065A1Method and device for mask repair

Publication Date: 2026.02.12 CARL ZEISS SMT GMBH

AI summary

The present invention relates to methods, to a device and to a computer program for processing of a lithography object. More particularly, the present invention relates to a method of removing a material, to a corresponding device and to a method of lithographic processing of a wafer, and to a computer program for performing the methods.A method of processing a lithography object comprises: providing a first gas comprising first molecules; providing a particle beam on the object for removal of a first object material based at least partly on the first gas, wherein the first material comprises iridium.