Mask Pattern Correction Using Scattering Bar Feedback
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Solution Overview
Problem
Conventional methods for providing scattering bars in photolithography struggle to determine their size and stability effectively across different regions, leading to optical proximity effect distortions and increased manufacturing costs due to complex algorithms and high defect rates.
Innovation Solution
A mask pattern correction method that involves providing main features, inserting first auxiliary patterns based on empirical rules, performing optical proximity corrections, and adjusting scattering bars based on light intensity distributions using a correction model to determine their size and position, thereby improving photolithographic quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to provide scattering bars, then the photolithography process can be maintained, but the scattering bar size and position cannot be sufficiently determined leading to optical proximity effect distortions
Solution Approach 1:
The patent implements feedback by performing an exposure process on the chip pattern region to obtain light intensity distribution of detection regions, then using this measured light intensity data to correct the auxiliary patterns. This closed-loop feedback mechanism enables precise determination of scattering bar size and position by adjusting auxiliary patterns based on actual optical effects, thereby resolving the contradiction between manufacturing precision and reliability.
Solution Approach 2:
The patent changes parameters by correcting auxiliary patterns based on light intensity distribution data and an auxiliary pattern correction model. This involves adjusting the size, position, and other parameters of scattering bars dynamically according to measured optical conditions, transforming fixed conventional methods into adaptive parameter optimization that simultaneously improves precision and stability.
2Manufacturing precision
If complex algorithms are used to determine scattering bar parameters, then the accuracy may improve, but the manufacturing cost increases
Solution Approach 1:
The patent applies self-service by using the photolithography system's own exposure process to generate light intensity distribution data that is then used to correct the auxiliary patterns. This self-measurement and self-correction approach eliminates the need for external complex algorithms and specialized equipment, achieving high precision while controlling manufacturing costs through resource utilization within the existing system.
3Length of moving object
If the design size continues to decrease, then the product complexity increases, but the optical image degradation becomes more obvious
Solution Approach 1:
The patent applies preliminary anti-action by performing optical proximity correction on the chip pattern region before the actual production photolithography process. This pre-correction compensates for expected optical degradation effects at reduced design sizes, allowing smaller features to be manufactured with maintained image quality by counteracting diffraction and other optical effects in advance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the accuracy and stability of scattering bars, reducing manufacturing costs and improving photolithographic resolution by determining the size and position of scattering bars effectively, thus minimizing distortions and defect rates.
Implementation Method 1
light is irradiated onto the photoresist-coated silicon wafer through regions in the mask where light can pass through, and the photoresist undergoes chemical reactions under the irradiation of light
Implementation Method 2
The diffraction effect of light becomes more and more obvious, and ultimately resulting in an optical image degradation on the design pattern
Data Source
AI summary
A correction method for a mask pattern is provided. The method includes providing a chip pattern region including a plurality of main features, and providing first auxiliary patterns around each main feature. The method also includes performing a first optical proximity correction to correct the main features into first correction features, and providing a plurality of detection regions. Each detection region is connected to an adjacent first correction feature via the first auxiliary pattern. In addition, the method includes performing an exposure process to obtain a light intensity distribution corresponding to each detection region after performing the exposure process. Moreover, the method includes correcting the first auxiliary patterns into second auxiliary patterns based on an auxiliary pattern correction model and the light intensity distribution of each detection region. Further, the method includes performing a second optical proximity correction on the first correction features to obtain second correction features.