Mask Sidewall Angle Optimization for Lithography Contrast
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Solution Overview
Problem
Current semiconductor lithography technologies face challenges in optimizing mask parameters for multi-layer film lens structures, which limits the improvement of imaging resolution and contrast beyond the optical diffraction limit.
Innovation Solution
A method and device for optimizing mask parameters by acquiring initial mask parameters, generating multiple sets of candidate mask parameters with varying sidewall angles, simulating these parameters to obtain imaging contrast, and selecting the optimal mask sidewall angle based on the highest imaging contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional lithography technology continuously reduces exposure wavelength and increases numerical aperture, then imaging resolution is improved, but it cannot break through the optical diffraction limit
Solution Approach 1:
The patent changes the physical parameters of the mask structure by optimizing the sidewall angle and thickness of the mask layer. By systematically varying the mask sidewall angle from 80° to 100° and adjusting mask thickness, the patent achieves optimal imaging contrast that overcomes the diffraction limit without requiring further reduction of exposure wavelength or increase of numerical aperture.
2Measurement precision
If structural parameters of the multi-layer film lens structure are improved to enhance imaging resolution, then imaging contrast is improved, but mask parameters remain unoptimized
Solution Approach 1:
The patent systematically changes mask parameters including sidewall angle (varying from 80° to 100° in 10° steps) and mask thickness to optimize imaging performance. This parameter optimization approach complements the multi-layer film lens structure improvements and achieves enhanced imaging contrast without adding device complexity.
Solution Approach 2:
The patent performs preliminary optimization of mask parameters before final imaging applications. By pre-determining the optimal sidewall angle (found to be 100°) and thickness parameters through systematic simulation and testing, the patent establishes optimized mask configurations that can be directly applied in practical lithography processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves the imaging contrast and resolution of the multi-layer film lens structure by optimizing mask parameters, thereby overcoming the limitations of traditional lithography technologies.
Implementation Method 1
Surface plasmons can use a specially designed metal thin film to couple and transmit evanescent waves to achieve the imaging of fine structures of objects with a characteristic size far smaller than the order of wavelength
Data Source
AI summary
The present disclosure provides a method for optimizing mask parameters, and the method includes: acquiring a test pattern, light source parameters, and initial mask parameters, the initial mask parameters including a mask thickness and an initial mask sidewall angle; generating multiple sets of candidate mask parameters according to the initial mask sidewall angle in the initial mask parameters; the multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness; obtaining an imaging contrast of each set of candidate mask parameters based on the test pattern and the light source parameters; and selecting an optimal mask sidewall angle from the multiple sets of candidate mask parameters according to the imaging contrasts. By generating multiple sets of candidate mask parameters including different mask sidewall angles and the same mask thickness, and simulating these sets of candidate mask parameters respectively, the imaging contrast of each set of candidate mask parameters is obtained, so that the optimal mask sidewall angle is found according to the imaging contrasts. Therefore, by optimizing the mask parameters of the multi-layer film lens structure, the imaging contrast can also be significantly improved, and the imaging resolution can be improved.