Mask Substrate Laser Irradiation for Positional Distortion Correction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional lithography techniques face challenges in achieving high resolution and accurate pattern formation due to limitations in alignment accuracy, particularly with second-order pattern positional distortions and magnification, which are not effectively addressed by existing methods.
Innovation Solution
A method involving a mask manufacturing process that detects positional deviations on a mask substrate, calculates the necessary irradiation amount and position for laser irradiation, and forms a heterogeneous layer with increased volume to correct positional distortions, allowing for precise alignment and pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography is used for pattern formation, then the manufacturing process is simple, but resolution and alignment accuracy deteriorate due to focal depth and aberration limitations
Solution Approach 1:
The patent replaces the optical lithography system with a mechanical nanoimprinting system. Instead of using light to form patterns, a physical stamp with a patterned surface is pressed directly onto the resist material, transferring the pattern through mechanical contact. This eliminates optical aberrations and focal depth limitations, achieving sub-10nm resolution that conventional lithography cannot attain.
Solution Approach 2:
The patent changes the fundamental parameter of pattern formation from optical wavelength-dependent to mechanical contact-dependent. By using a physical stamp with controlled surface topology rather than light exposure, the system achieves resolution beyond the diffraction limit of light, transforming the manufacturing precision parameter from optical to mechanical domain.
2Manufacturing precision
If a highly accurate imprint mask is formed to achieve precise pattern transcription, then pattern accuracy improves, but manufacturing complexity and cost increase
Solution Approach 1:
The patent performs preliminary alignment correction by adding positioning protrusions to the stamp and corresponding positioning recesses to the substrate before the actual pattern transfer. This preliminary action ensures that even if the stamp has second-order positional distortions, the patterns will align correctly with the underlying structure, eliminating the need for extremely high manufacturing accuracy in the stamp itself.
Solution Approach 2:
The patent introduces localized positioning features (protrusions and recesses) at specific locations on the stamp and substrate. Rather than requiring the entire stamp surface to have perfect accuracy, only specific local regions need precise geometric features for alignment, while other regions can tolerate normal manufacturing variations.
3Manufacturing precision
If the imprint mask has second-order pattern positional distortion, then alignment accuracy deteriorates, but creating a perfect mask increases manufacturing difficulty
Solution Approach 1:
The patent incorporates a feedback mechanism where the positioning protrusions on the stamp interact with positioning recesses on the substrate during the imprinting process. This mechanical feedback automatically compensates for second-order positional distortions by physically constraining the stamp to the correct position, allowing masks with moderate manufacturing tolerances to achieve high alignment accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables accurate correction of complex positional distortions in imprint masks, improving alignment accuracy and manufacturing yield in semiconductor device production, particularly for patterns with second-order distortions, and enhances the resolution in nanoimprint techniques.
Implementation Method 1
irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region
Data Source
AI summary
According to one embodiment, a mask manufacturing method includes acquiring positional deviation information between an actual position of a pattern formed on a mask substrate and a design position decided at the time of designing the pattern; calculating an irradiating amount and an irradiating position of radiation to be irradiated to a predetermined area of a square on the mask substrate according to the calculated positional deviation information; and irradiating the radiation based on the calculated irradiating amount and the calculated irradiating position to form in a part of the mask substrate a heterogeneous layer of which volume is expanded more greatly than that of the surrounding mask substrate region.