Semiconductor Mask With Supplemental Pattern For Defect-Free Transfer
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Solution Overview
Problem
The existing double patterning methods for semiconductor device manufacturing face limitations in transferring patterns due to defects in regions where the second pattern is not properly formed, leading to incomplete pattern transfer onto the semiconductor substrate.
Innovation Solution
A mask with a supplemental pattern is introduced, which is spaced apart from the first and second patterns by a specific distance, allowing for proper transfer of both patterns to the substrate by forming a semi-rectangular shape that encompasses the second pattern and ensuring the supplemental pattern is isolated, thereby preventing defects in the pattern transfer process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If double patterning methods are used to form finer patterns, then manufacturing precision is improved, but defects occur in regions where the second pattern is not properly transferred
Solution Approach 1:
The mask structure is designed in advance with a supplemental pattern positioned at a specific distance from the second pattern. This preliminary configuration ensures that during the etching process, the supplemental pattern prevents defects by maintaining proper spacing, thereby ensuring complete and accurate pattern transfer without requiring additional corrective steps.
2Area of moving object
If the pitch of patterns is reduced to achieve higher integration, then device density is improved, but photolithography resolution limitations prevent further reduction
Solution Approach 1:
The patterning process is divided into two separate steps: first forming the first pattern using photolithography, then forming the second pattern using a self-aligning method with spacers. This segmentation allows each step to work within the capabilities of available technologies while achieving an overall finer pitch that would be impossible with a single photolithography step.
Solution Approach 2:
The invention transitions from direct planar patterning to a multi-dimensional approach by forming vertical spacer structures and using supplemental patterns at specific distances. This adds spatial dimensions to the patterning process, enabling finer feature sizes to be achieved by utilizing depth and spacing rather than relying solely on lateral resolution.
Data Source
AI summary
In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W1. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance D1 in the first direction from the second pattern.