Lithographic Mask Surface Processing via Segmented Gas Exposure
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Solution Overview
Problem
Existing methods for processing lithographic masks struggle to selectively optimize exposure settings and process parameters for partial reactions without negatively affecting other processes, due to the use of gas mixtures that promote multiple reactions simultaneously.
Innovation Solution
A method involving a gas mixture with a first and second gas, where the reaction site is exposed to energetic particles in multiple intervals with a gas refresh interval to selectively amplify one partial reaction's process rate relative to another, by adjusting the gas refresh interval and exposure parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas mixtures are used to promote multiple partial reactions simultaneously, then productivity is improved by processing multiple defects in one cycle, but manufacturing precision deteriorates because exposure settings cannot be selectively optimized for individual partial reactions
Solution Approach 1:
The patent segments the processing cycle into multiple distinct exposure intervals, each dedicated to optimizing a specific partial reaction. Between these intervals, gas refresh intervals supply different reaction gases selectively. This temporal segmentation allows each partial reaction to be optimized independently while maintaining high overall productivity through continuous processing.
2Manufacturing precision
If gas refresh intervals are introduced to selectively promote partial reactions, then manufacturing precision is improved by optimizing exposure settings for specific reactions, but productivity deteriorates due to additional time intervals between exposures
Solution Approach 1:
The patent implements periodic action by alternating between exposure intervals and gas refresh intervals in a cyclic manner. Each exposure interval is optimized for a specific partial reaction, followed by a gas refresh interval that prepares the reaction environment for the next exposure. This periodic structure enables selective optimization while maintaining continuous processing flow.
Solution Approach 2:
Gas refresh intervals perform preliminary action by supplying and adsorbing the appropriate reaction gas before each exposure interval. This ensures that when each exposure interval begins, the reaction environment is already optimized for the intended partial reaction, eliminating the need for separate gas introduction steps during exposure and thereby minimizing time penalties.
3Device complexity
If multiple reaction gases are supplied simultaneously as a mixture, then device complexity is reduced by using a single gas supply system, but adaptability deteriorates because individual gas concentrations cannot be independently controlled
Solution Approach 1:
The patent introduces dynamics by switching gas supply configurations between different time intervals. During gas refresh intervals, the system dynamically introduces specific reaction gases with controlled concentrations. During exposure intervals, the gas supply is maintained at levels optimized for the active partial reaction. This dynamic adjustment of gas concentrations across time enables high adaptability while using a relatively simple gas supply infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for targeted optimization of process rates and parameters for specific partial reactions, enabling more precise control over mask repair and surface processing in microelectronics, enhancing the accuracy and efficiency of defect correction.
Implementation Method 1
By exposure to an energetic particle beam, the adsorbed gas molecules can be 'activated'
Implementation Method 2
These reaction gases then diffuse to the reaction site and are adsorbed here at the surface of the mask
Implementation Method 3
the first partial reaction is promoted primarily by the first gas and the second partial reaction is promoted primarily by the second gas
Implementation Method 4
These reaction gases then diffuse to the reaction site and are adsorbed here at the surface of the mask
Data Source
AI summary
Described are a method for processing a surface of an object, in particular of a lithographic mask, an apparatus for carrying out such a method and a computer program containing instructions for carrying out such a method.A method for processing a surface of an object, in particular of a lithographic mask, includes the following steps: (a.) supplying a gas mixture containing at least a first gas and a second gas to a reaction site at the surface of the object; (b.) inducing a reaction, which includes at least a first partial reaction and a second partial reaction, at the reaction site by exposing the reaction site to a beam of energetic particles in a plurality of exposure intervals, wherein the first partial reaction is promoted primarily by the first gas and the second partial reaction is promoted primarily by the second gas, and wherein a gas refresh interval lies between the respective exposure intervals; (c.) setting a first time duration for the gas refresh interval, as a result of which the process rate of the first partial reaction and the process rate of the second partial reaction are present; (d.) setting a second time duration for the gas refresh interval, which brings about a relative increase in the process rate of the first partial reaction in comparison with the process rate of the second partial reaction.