Mask Treating Apparatus Laser Correction Critical Dimension Deviations
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Solution Overview
Problem
In semiconductor manufacturing, the precise etching of patterns on masks is hindered by deviations in critical dimensions between monitoring and anchor patterns, leading to over-etching and increased processing time, necessitating a method to uniformly correct and maintain pattern dimensions.
Innovation Solution
A substrate treating apparatus and method that includes a support unit for rotating and positioning masks, a heating unit with a laser irradiator to correct critical dimensions by irradiating specific patterns, and a controller to synchronize the movement and heating processes, ensuring precise etching and uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etching is performed to equalize the critical dimension of monitoring pattern and anchor pattern, then the critical dimension uniformity is improved, but over-etching occurs leading to increased processing time
Solution Approach 1:
The patent applies local quality by selectively etching only the anchor pattern rather than uniformly etching all patterns. The support unit positions the anchor pattern at a specific region where the etching unit applies etching liquid, while the monitoring pattern remains in a different region. This localized approach corrects critical dimension deviations without causing over-etching of the monitoring pattern, thus improving precision without excessive processing time.
Solution Approach 2:
The patent segments the etching process into distinct regions: a first region containing the monitoring pattern and a second region containing the anchor pattern. The support unit independently controls the positioning of these patterns, allowing the etching unit to selectively process only the anchor pattern in the second region while leaving the monitoring pattern in the first region unaffected. This segmentation prevents over-etching and reduces unnecessary processing time.
2Manufacturing precision
If precise etching is performed to minimize over-etching, then etching precision is improved, but the etching process takes a lot of time
Solution Approach 1:
The support unit enables local quality control by positioning only the anchor pattern (which requires precise etching) at the specific region where the etching unit operates. The monitoring pattern is positioned elsewhere and is not subjected to the same etching conditions. This allows high-precision etching to be applied selectively where needed, maintaining etching precision while avoiding unnecessary processing of other patterns, thus improving overall productivity.
3Manufacturing precision
If critical dimension correction process is additionally performed, then pattern dimension accuracy is improved, but processing complexity increases
Solution Approach 1:
The patent simplifies the overall process complexity by applying critical dimension correction locally to only the anchor pattern rather than requiring correction of all patterns. The support unit positions the anchor pattern at a specific region for targeted etching, while the monitoring pattern remains in a different region. This localized correction approach maintains pattern dimension accuracy without requiring complex multi-step correction processes for all patterns.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus efficiently minimizes deviations in critical dimensions between patterns, enabling precise and uniform etching, thereby reducing processing time and improving the accuracy of pattern correction.
Implementation Method 1
a heating unit having a laser irradiator for irradiating a laser light L to a specific region of the mask
Implementation Method 2
heating a specific region of the mask
Data Source
AI summary
The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; and a heating unit having a laser irradiator for irradiating a laser light to a specific region of the mask supported on the support unit, and a controller configured to control the support unit and the heating unit, and wherein the support unit includes: a support part for supporting the mask; and a moving stage part configured to move a position of the support part, and wherein the controller controls the moving stage part so a position of the mask supported on the support part is changed so the second pattern is positioned at the specific region.