Mask Treating Apparatus Quadrant Laser Positioning
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Solution Overview
Problem
The existing substrate treating processes face challenges in efficiently and accurately correcting the critical dimensions of patterns on masks during the photolithography process, leading to over-etching issues due to differences in etching rates between monitoring and anchor patterns, which increases processing time and complexity.
Innovation Solution
A substrate treating apparatus and method that includes a support unit for rotating the mask, a heating unit with a laser irradiation module, and a controller to precisely position the laser for uniform critical dimension correction by minimizing movement and optimizing the position of the laser irradiation based on quadrant divisions, ensuring accurate alignment and etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the monitoring pattern and anchor pattern are etched repeatedly to equalize their critical dimensions, then the critical dimension accuracy is improved, but over-etching occurs and processing time increases
Solution Approach 1:
The patent introduces a position correction process before the critical dimension correction etching. This preliminary action measures and corrects the positional deviation of the anchor pattern relative to the monitoring pattern, ensuring that subsequent etching is applied uniformly to both patterns. By addressing position misalignment beforehand, the patent prevents the need for repeated etching cycles to achieve critical dimension equality, thereby reducing processing time while maintaining accuracy.
Solution Approach 2:
The patent implements a feedback mechanism where the positional relationship between the anchor pattern and monitoring pattern is measured using a scanning electron microscope or similar inspection equipment. This measurement feedback is used to adjust the etching process parameters and positioning, ensuring that both patterns receive equivalent etching treatment. The feedback loop enables precise control of the critical dimension correction process without requiring excessive repeated etching.
2Adaptability or versatility
If the laser irradiation module moves extensively to treat different patterns, then all patterns can be treated, but the device complexity and treatment time increase
Solution Approach 1:
The patent divides the mask into four quadrants and positions the laser irradiation module to operate primarily from the fourth quadrant. By segmenting the treatment area and optimizing the laser module position, the patent reduces the movement range required while ensuring all patterns are treated. The support unit rotates the mask to bring different quadrants into the optimal treatment position, allowing comprehensive pattern treatment with minimal laser module movement.
Solution Approach 2:
The patent introduces rotational movement of the mask via the support unit as an additional degree of freedom. Instead of moving the laser irradiation module extensively in the XY plane to treat all patterns, the mask is rotated to bring different pattern regions into the fixed or limited-range laser treatment zone. This dimensional change from linear laser movement to rotational mask movement simplifies the heating unit structure while maintaining full pattern coverage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and precise correction of critical dimensions, reducing over-etching and processing time by ensuring accurate alignment and uniform etching across patterns, thereby improving the overall substrate treatment process.
Implementation Method 1
a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern
Data Source
AI summary
The inventive concept provides a mask treating apparatus. The mask treating apparatus includes a support unit configured to support and rotate a mask, the mask having a first pattern within a plurality of cells thereof and a second pattern outside regions of the plurality of cells; a heating unit including a laser irradiation module and a moving module, the laser irradiation module having a laser irradiator for irradiating a laser light to the second pattern, the moving module configured to change a position of the laser irradiation module; and a controller configured to control the support unit and the heating unit, and wherein when a treating position is divided into four equal parts from a first quadrant to a fourth quadrant based on a center of the mask, the laser irradiator is positioned at the fourth quadrant and the first quadrant in a direction linearly moving from a standby position to the treating position, positioned at the third quadrant in a direction which is perpendicular to the fourth quadrant, and positioned at the second quadrant in a direction which is perpendicular to the first quadrant, and wherein the controller controls a rotation of the support unit so the second pattern is positioned at the fourth quadrant.