Masked Ion-Implanted Block Transfer for Reusable Donor Substrates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current techniques for transferring blocks from a donor substrate to a receiver substrate in semiconductor production face limitations such as low crystal quality, high production costs, and wastage of high-value donor substrates, particularly when using III-V semiconductor materials.
Innovation Solution
A process involving ion implantation to create localized embrittlement planes on the donor substrate, allowing for the transfer of blocks to a receiver substrate while reusing and recycling the donor substrate, and enabling flexibility in substrate dimensions and pattern freedom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If localized epitaxy is used to form tiled structures on the carrier substrate, then thin layers and complex structures can be obtained, but the crystal quality is relatively low and high epitaxy temperature may damage existing electronic devices
Solution Approach 1:
The process segments the transfer operation into distinct stages: forming raised regions on the donor substrate, bonding only these raised regions to the carrier substrate, and then detaching the donor substrate. This segmentation allows the bulk donor substrate to remain intact for reuse while transferring only the necessary blocks, resolving the contradiction between achieving complex structures and maintaining crystal quality.
Solution Approach 2:
The method performs preliminary actions by forming raised regions on the donor substrate before bonding occurs. These raised regions are prepared in advance through material deposition or removal of surrounding areas, allowing subsequent bonding to proceed at lower temperatures that preserve crystal quality while still achieving the desired complex structures.
2Manufacturing precision
If the SMART CUT process is used to transfer blocks from donor substrate to carrier substrate, then blocks can be transferred, but the donor substrate must be the same size as the carrier substrate and a large amount of high-value donor substrate is sacrificed
Solution Approach 1:
The invention applies local quality by creating raised regions only at specific locations on the donor substrate where blocks need to be transferred. The donor substrate maintains its full size and integrity elsewhere, allowing it to be reused. This localized approach transfers blocks accurately while minimizing waste of high-value donor substrate material.
Solution Approach 2:
The process discards only the minimal necessary portions of the donor substrate (the regions removed to create raised structures or the raised regions themselves after transfer), while recovering and reusing the bulk donor substrate for subsequent transfer operations. This dramatically reduces the loss of high-value donor substrate compared to traditional methods.
3Adaptability or versatility
If the die-to-wafer technique is used to transfer dice from donor substrate to carrier substrate, then flexibility in substrate sizes is achieved, but the process is extremely slow and entails very high production costs
Solution Approach 1:
The method merges multiple operations into a single integrated process: forming raised regions, bonding to carrier substrate, and detaching donor substrate are combined in a sequence that enables parallel processing of multiple blocks. This maintains the adaptability of different substrate sizes while dramatically increasing transfer speed compared to sequential die-to-wafer methods.
Solution Approach 2:
The process ensures continuity of useful action by maintaining the donor substrate in a reusable state after transfer. The donor substrate can immediately undergo another cycle of raised region formation and transfer operations without requiring re fabrication or extensive processing, enabling continuous high-speed production while accommodating flexible substrate size configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process enhances crystal quality, reduces production costs, and conserves high-value donor substrates by allowing multiple uses and efficient recycling, while offering greater freedom in pattern design and substrate size compatibility.
Implementation Method 1
forming, by ion implantation through the mask, an embrittlement plane localized in the donor substrate vertically in line with at least one exposed region
Data Source
AI summary
A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.