Masked Substrate Hole Processing With Laser-Assisted Etching
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Solution Overview
Problem
Existing substrate processing methods using ultrashort pulse lasers for forming holes in substrates face a trade-off between high-quality processing and low production efficiency due to low processing speeds.
Innovation Solution
A substrate processing apparatus and method that involves placing a mask with openings on a processing substrate, overlapping it with a cover substrate, and irradiating a beam to form holes while the substrate is in contact with an etching solution, which may include aromatic compounds, halogen atoms, and metal oxides, using a pulse laser or cyclotron radiation, and includes a rotator and temperature control to enhance processing speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If ultrashort pulse laser is used to form holes in substrate, then processing quality increases, but processing speed decreases
Solution Approach 1:
The patent introduces an etching solution as an intermediary substance between the laser and substrate. The solution absorbs laser energy and generates micro-explosions that enhance material removal efficiency, thereby increasing processing speed while maintaining hole formation quality through chemical-assisted physical ablation
Solution Approach 2:
The patent changes the physical state and chemical composition parameters by introducing liquid etching solution containing aromatic compounds, halogen atoms, and metal oxides. This parameter change enables the system to achieve both high-quality hole formation and improved processing speed through synergistic laser-chemical interaction
2Manufacturing precision
If mask is placed directly on substrate, then processing precision improves, but etching solution access to substrate decreases
Solution Approach 1:
The patent segments the mask structure by creating openings in the mask layer, allowing etching solution to access the substrate through these segmented pathways. This segmentation maintains precision by defining hole locations while enabling sufficient solution-substrate contact for effective etching
Solution Approach 2:
The patent applies local quality by having the mask cover only specific regions where hole formation is desired, while leaving other regions open for etching solution access. This localized masking approach ensures precision in targeted areas without compromising overall etching efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases processing speed while maintaining high-quality hole formation by optimizing the etching solution composition and beam irradiation, allowing for efficient and precise hole formation in substrates.
Implementation Method 1
irradiating a beam onto the top surface of the processing substrate to form a plurality of processing holes in the processing substrate
Implementation Method 2
irradiating a beam onto the top surface of the processing substrate to form a plurality of processing holes in the processing substrate, wherein a bottom surface of the processing substrate contacts the etching solution
Implementation Method 3
a bottom surface of the processing substrate contacts the etching solution... the etching solution may include an aromatic compound... the etching solution may include a halogen atom... the etching solution may include a metal oxide
Data Source
AI summary
A method of processing a substrate includes placing a mask on a top surface of a processing substrate, the mask including openings, placing a cover substrate on the mask, the cover substrate overlapping the openings of the mask, placing the processing substrate on a vessel that accommodates an etching solution, and irradiating a beam onto the top surface of the processing substrate to form processing holes in the processing substrate, where a bottom surface of the processing substrate contacts the etching solution.