ECC Memory Pipeline for Consecutive Write Mask Operations

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Solution Overview

Problem

Semiconductor memory devices face increased susceptibility to soft errors due to reduced charge storage margins and leakage currents, leading to random single bit errors, which can be exacerbated by the use of error correction codes that increase operational time and reduce performance.

Innovation Solution

The implementation of a memory system with a write driver, data sense amplifier, error control code circuit, and control circuit that enables pipelining of consecutive write mask operations, allowing for concurrent execution of operations and reduced execution time by starting the second write mask operation before the first completes, thereby improving data integrity and performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If error correction code (ECC) is used with the memory, then data integrity is improved, but the time required for memory operations increases

Engineering Contradiction:
Improvedata integrityVSAvoidmemory operation time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent applies preliminary action by performing ECC encoding in parallel with memory write operations. The ECC circuit generates correction codes while data is being written to memory, so that when data is read, the correction codes are already available, eliminating the need to wait for ECC processing after read operations.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements continuity of useful action by maintaining parallel processing streams where ECC encoding, data writing, and subsequent read operations occur concurrently rather than sequentially. This allows the system to continuously perform useful work (ECC processing and memory operations) simultaneously, reducing total operation time while maintaining data integrity.

Inventive Principle:
Principle #20Continuity of useful action

2Quantity of substance

If feature sizes of semiconductor memory are reduced, then memory capacity and area efficiency are improved, but the margin of error for detecting data state decreases

Engineering Contradiction:
Improvememory capacityVSAvoiddata state detection margin
Core Design Contradiction:
Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent applies beforehand cushioning by implementing ECC that can detect and correct errors before they propagate. The error correction codes provide a buffer against soft errors that become more likely with reduced cell sizes, cushioning the system against the increased vulnerability to charge leakage and alpha particle interactions.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Use of energy by moving object

If voltage levels provided to semiconductor memory are reduced, then power consumption is limited, but the charge stored in each memory cell is reduced

Engineering Contradiction:
Improvepower consumptionVSAvoidcharge stored in memory cell
Core Design Contradiction:
Use of energy by moving objectVSQuantity of substance

Solution Approach 1:

The patent applies beforehand cushioning by using ECC to protect against errors caused by reduced charge storage. The error correction codes provide a safety margin that compensates for the lower charge levels in reduced-voltage operation, allowing the system to maintain reliability despite operating with smaller voltage swings and reduced stored charge.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Data Source

PatentUS11309919B2Apparatuses and methods for pipelining memory operations with error correction coding
Publication Date: 2022.04.19 MICRON TECHNOLOGY INC
  • US11309919B2 patent drawing
  • US11309919B2 patent drawing
  • US11309919B2 patent drawing

AI summary

Apparatuses and methods for pipelining memory operations with error correction coding are disclosed. A method for pipelining consecutive write mask operations is disclosed wherein a second read operation of a second write mask operation occurs during error correction code calculation of a first write mask operation. The method may further including writing data from the first write mask operation during the error correction code calculation of the second write mask operation. A method for pipelining consecutive operations is disclosed where a first read operation may be cancelled if the first operation is not a write mask operation. An apparatus including a memory having separate global read and write input-output lines is disclosed.